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Method for forming void-free dielectric layer

  • US 8,691,659 B2
  • Filed: 10/26/2011
  • Issued: 04/08/2014
  • Est. Priority Date: 10/26/2011
  • Status: Active Grant
First Claim
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1. A method for forming a dielectric layer, comprising:

  • providing a substrate, a recess disposed in said substrate, a buffer layer disposed on said substrate without covering said recess and at least one protrusion disposed on said substrate and adjacent to said recess;

    forming a trimming photoresist without exposure to fill said recess and to cover said protrusion and said exposed buffer layer;

    performing an etching-back step to partially remove said trimming photoresist to expose said at least one protrusion;

    performing a trimming etching step to eliminate said protrusion;

    performing an ashing step to eliminate said trimming photoresist; and

    forming a dielectric layer to fill said recess and to cover said buffer layer.

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