Method for forming void-free dielectric layer
First Claim
1. A method for forming a dielectric layer, comprising:
- providing a substrate, a recess disposed in said substrate, a buffer layer disposed on said substrate without covering said recess and at least one protrusion disposed on said substrate and adjacent to said recess;
forming a trimming photoresist without exposure to fill said recess and to cover said protrusion and said exposed buffer layer;
performing an etching-back step to partially remove said trimming photoresist to expose said at least one protrusion;
performing a trimming etching step to eliminate said protrusion;
performing an ashing step to eliminate said trimming photoresist; and
forming a dielectric layer to fill said recess and to cover said buffer layer.
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Accused Products
Abstract
A method for forming a dielectric layer free of voids is disclosed. First, a substrate, a first stressed layer including a recess, a second stressed layer disposed on the first stressed layer and covering the recess and a patterned photoresist embedded in the recess are provided. Second, a first etching step is performed to totally remove the photoresist so that the remaining second stressed layer forms at least one protrusion adjacent to the recess. Then, a trimming photoresist is formed without exposure to fill the recess and to cover the protrusion. Later, a trimming etching step is performed to eliminate the protrusion and to collaterally remove the trimming photoresist.
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Citations
20 Claims
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1. A method for forming a dielectric layer, comprising:
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providing a substrate, a recess disposed in said substrate, a buffer layer disposed on said substrate without covering said recess and at least one protrusion disposed on said substrate and adjacent to said recess; forming a trimming photoresist without exposure to fill said recess and to cover said protrusion and said exposed buffer layer; performing an etching-back step to partially remove said trimming photoresist to expose said at least one protrusion; performing a trimming etching step to eliminate said protrusion; performing an ashing step to eliminate said trimming photoresist; and forming a dielectric layer to fill said recess and to cover said buffer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification