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Backside process for a substrate

  • US 8,691,664 B2
  • Filed: 01/11/2010
  • Issued: 04/08/2014
  • Est. Priority Date: 04/20/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • providing conductive material forming through vias having thicknesses in a range from a maximum thickness to a minimum thickness, embedded within a first substrate, wherein the first substrate comprises a non-conducting material;

    mechanically grinding a backside of the first substrate to a thickness wherein at least 1 μ

    m of the non-conducting material remains covering the conductive material embedded within the first substrate so that the grinding exposes no portion of any one of the through vias, the thickness of the first substrate being greater than the maximum thickness following the grinding;

    following the grinding, employing chemical mechanical polishing (CMP) with an undiscerning slurry to the backside of the first substrate, thereby exposing the conductive material of each of the through vias, the thickness of the first substrate being less than the minimum thickness following the CMP; and

    following the CMP, employing a spin wet-etch, with a protective formulation to remove a thickness y of the non-conducting material from the backside of the first substrate, thereby causing the conductive material of each of the through vias to protrude from the backside of the first substrate.

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