Semiconductor device and method for manufacturing the same

• US 8,692,243 B2
• Filed: 04/11/2011
• Issued: 04/08/2014
• Est. Priority Date: 04/20/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kamata, Koichiro, Ito, Yoshiaki, Ohmaru, Takuro
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): SALERNO, SARAH KATE
• Application Number:
  US13/083,642
• Publication Number:
  US 20110254095A1
• Time in Patent Office: 1,093 Days
• Field of Search: 257/43, 257/368, 257/E27.06, 257/E21.616, 257/369, 257/379, 438/237, 438/152, 438/155
• US Class Current: 257/43
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795

Abstract

An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a first transistor comprising a first semiconductor film;

an insulating film over the first transistor;

a second transistor comprising a first oxide semiconductor film over the insulating film; and

a diode comprising a second semiconductor film and a second oxide semiconductor film over the second semiconductor film,

wherein the first semiconductor film and the second semiconductor film are formed on a same insulating surface, and

wherein the first oxide semiconductor film and the second oxide semiconductor film comprise a same oxide semiconductor.

2. The semiconductor device according to claim 1,

wherein the diode comprises an intrinsic semiconductor film between the second semiconductor film and the second oxide semiconductor film.

3. The semiconductor device according to claim 1,

wherein the first transistor is a p-type transistor,

wherein the second transistor is an n-type transistor, and

wherein the second semiconductor film is a p-type semiconductor film.

4. The semiconductor device according to claim 1,

wherein the second semiconductor film and the second oxide semiconductor film are stacked with each other.

5. The semiconductor device according to claim 1,

wherein the first semiconductor film and the second semiconductor film are a polycrystalline semiconductor film.

6. The semiconductor device according to claim 1,

wherein the first semiconductor film and the second semiconductor film are a single crystal semiconductor film.

7. The semiconductor device according to claim 1,

wherein the second transistor is a bottom-gate transistor.

8. The semiconductor device according to claim 1,

wherein the first oxide semiconductor film comprises indium.

9. The semiconductor device according to claim 1,

wherein the first semiconductor film and the second semiconductor film comprise a silicon.

10. The semiconductor device according to claim 1,

wherein the first transistor comprises a first gate insulating film over the first semiconductor film, a first gate over the first gate insulating film, and an insulating film over the first gate,

wherein the second transistor comprises a second gate over the insulating film, a second gate insulating film over the second gate, and the first oxide semiconductor film over the second gate insulating film,

wherein the diode comprises an island-shaped intrinsic semiconductor film stacked and in contact with the second semiconductor film, and the second oxide semiconductor film stacked and in contact with the island-shaped intrinsic semiconductor film.

11. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first semiconductor film and a second semiconductor film by processing a semiconductor layer;

forming a first gate insulating film over the first semiconductor film;

forming a first gate over the first gate insulating film;

forming a first transistor comprising the first semiconductor film, the first gate insulating film, and the first gate;

forming an insulating layer to cover the first transistor and the second semiconductor film;

forming an opening provided in a region where the second semiconductor film is formed by removing a part of the insulating layer;

forming an island-shaped intrinsic semiconductor film stacked and in contact with the second semiconductor film;

forming a second gate over the insulating layer;

forming a second gate insulating film over the second gate;

forming an oxide semiconductor layer over the insulating layer and the second semiconductor film;

forming a first oxide semiconductor film over the insulating layer and a second oxide semiconductor film stacked and in contact with the island-shaped intrinsic semiconductor film by processing the oxide semiconductor layer; and

forming a second transistor comprising the second gate, the second gate insulating film, and the first oxide semiconductor film and a diode comprising the second semiconductor film, the island-shaped intrinsic semiconductor film, and the second oxide semiconductor film.

12. The method for manufacturing a semiconductor device according to claim 11, further comprising the step of:

forming an intrinsic semiconductor layer over the second semiconductor film before forming the oxide semiconductor layer over the insulating layer and the second semiconductor film.

13. The method for manufacturing a semiconductor device according to claim 11,

wherein the first transistor is a p-type transistor,

wherein the second transistor is an n-type transistor, and

wherein the second semiconductor film is a p-type semiconductor film.

14. The method for manufacturing a semiconductor device according to claim 11,

wherein the second semiconductor film and the second oxide semiconductor film are stacked with each other.

15. The method for manufacturing a semiconductor device according to claim 11,

wherein the semiconductor layer is a polycrystalline semiconductor layer provided over an insulating surface.

16. The method for manufacturing a semiconductor device according to claim 11,

wherein the semiconductor layer is a single crystal semiconductor layer provided over an insulating surface.

17. The method for manufacturing a semiconductor device according to claim 11,

wherein the semiconductor layer is formed from a single crystal semiconductor substrate.

18. The method for manufacturing a semiconductor device according to claim 11,

wherein the second transistor is a bottom-gate transistor.

19. The method for manufacturing a semiconductor device according to claim 11,

wherein the second transistor is a top-gate transistor.