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Power storage device

  • US 8,692,249 B2
  • Filed: 11/04/2011
  • Issued: 04/08/2014
  • Est. Priority Date: 07/28/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate having an insulating surface;

    a field-effect transistor over the substrate;

    a first electrode penetrating the substrate; and

    a first adhesive over the field-effect transistor and the first electrode,wherein the field-effect transistor is between a first structural body and a second structural body,wherein the second structural body has higher rigidity than the first structural body,wherein the first electrode is electrically connected to a second electrode, andwherein the second electrode is between the first electrode and the second structural body.

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