Power storage device

• US 8,692,249 B2
• Filed: 11/04/2011
• Issued: 04/08/2014
• Est. Priority Date: 07/28/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Arai, Yasuyuki
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): PATTON, PAUL E
• Application Number:
  US13/289,467
• Publication Number:
  US 20120112192A1
• Time in Patent Office: 886 Days
• Field of Search: 257/57, 257/66, 257/E29.295
• US Class Current: 257/57
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01Q 1/36 Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewithH01Q1/08, H01Q1/14 take precedence
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: H01Q 9/285 Planar dipole H01Q9/065 takes precedence; patch antenna H01Q9/0407
• CPC Class Codes: H02J 50/005 Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices
• CPC Class Codes: H02J 50/10 using inductive coupling
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02J 50/27 characterised by the type of receiving antennas, e.g. rectennas

Abstract

A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented.

Claims

1. A semiconductor device comprising:

a substrate having an insulating surface;

a field-effect transistor over the substrate;

a first electrode penetrating the substrate; and

a first adhesive over the field-effect transistor and the first electrode,

wherein the field-effect transistor is between a first structural body and a second structural body,

wherein the second structural body has higher rigidity than the first structural body,

wherein the first electrode is electrically connected to a second electrode, and

wherein the second electrode is between the first electrode and the second structural body.

2. The semiconductor device according to claim 1, wherein the substrate is selected from a glass substrate, a quartz substrate, a silicon on insulator substrate.

3. The semiconductor device according to claim 1, wherein conductive particles are dispersed in the first adhesive.

4. The semiconductor device according to claim 3, wherein a part of the conductive particles is in contact with the electrode.

5. The semiconductor device according to claim 1, wherein the first adhesive is selected from an acrylic-based adhesive, urethane-based adhesive, and epoxy-based adhesive.

6. The semiconductor device according to claim 1, further comprising a second adhesive under the substrate.

7. The semiconductor device according to claim 6, wherein conductive particles are dispersed in the first adhesive and the second adhesive.

15. The semiconductor device according to claim 1,

wherein a width of the first structural body is larger than a width of the second structural body in a channel length direction.

8. A semiconductor device comprising:

a substrate having an insulating surface;

an integrated circuit over the substrate;

a first electrode penetrating the substrate; and

a first adhesive over the integrated circuit and the first electrode;

wherein the integrated circuit is between a first structural body and a second structural body,

wherein the second structural body has higher rigidity than the first structural body,

wherein the first electrode is electrically connected to a second electrode, and

wherein the second electrode is between the first electrode and the second structural body.

9. The semiconductor device according to claim 8, wherein the substrate is selected from a glass substrate, a quartz substrate, a silicon on insulator substrate.

10. The semiconductor device according to claim 8, wherein conductive particles are dispersed in the first adhesive.

11. The semiconductor device according to claim 10, wherein a part of the conductive particles is in contact with the electrode.

12. The semiconductor device according to claim 8, wherein the first adhesive is selected from an acrylic-based adhesive, urethane-based adhesive, and epoxy-based adhesive.

13. The semiconductor device according to claim 8, further comprising a second adhesive under the substrate.

14. The semiconductor device according to claim 13, wherein conductive particles are dispersed in the first adhesive and the second adhesive.

16. The semiconductor device according to claim 8,

wherein a width of the first structural body is larger than a width of the second structural body in a channel length direction.

17. A semiconductor device comprising:

a substrate;

a gate of a field-effect transistor over the substrate;

a first electrode penetrating the substrate; and

a first adhesive over the field-effect transistor and the first electrode,

wherein the field-effect transistor is between a first structural body and a second structural body,

wherein the second structural body has higher rigidity than the first structural body, and

wherein the first electrode is electrically connected to a second electrode, and

wherein the second electrode is between the first electrode and the second structural body.

18. The semiconductor device according to claim 17,

wherein a width of the first structural body is larger than a width of the second structural body in a channel length direction.