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High efficiency Group III nitride LED with lenticular surface

  • US 8,692,267 B2
  • Filed: 07/21/2011
  • Issued: 04/08/2014
  • Est. Priority Date: 09/22/2004
  • Status: Active Grant
First Claim
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1. A high efficiency Group III nitride light emitting diode comprising:

  • a substrate;

    a Group III nitride-based light emitting region on said substrate, said Group III nitride-based light emitting region comprising a plurality of Group III nitride-based layers; and

    a lenticular surface that directly contacts one of said Group III nitride-based layers of said light emitting region, the lenticular surface comprising transparent material that is different from the one of said Group III nitride-based layers of said light emitting region that the lenticular surface directly contacts.

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