High efficiency Group III nitride LED with lenticular surface
First Claim
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1. A high efficiency Group III nitride light emitting diode comprising:
- a substrate;
a Group III nitride-based light emitting region on said substrate, said Group III nitride-based light emitting region comprising a plurality of Group III nitride-based layers; and
a lenticular surface that directly contacts one of said Group III nitride-based layers of said light emitting region, the lenticular surface comprising transparent material that is different from the one of said Group III nitride-based layers of said light emitting region that the lenticular surface directly contacts.
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Abstract
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
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13 Claims
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1. A high efficiency Group III nitride light emitting diode comprising:
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a substrate; a Group III nitride-based light emitting region on said substrate, said Group III nitride-based light emitting region comprising a plurality of Group III nitride-based layers; and a lenticular surface that directly contacts one of said Group III nitride-based layers of said light emitting region, the lenticular surface comprising transparent material that is different from the one of said Group III nitride-based layers of said light emitting region that the lenticular surface directly contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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