Semiconductor light emitting device, light emitting module, lighting apparatus and display element

• US 8,692,285 B2
• Filed: 10/12/2012
• Issued: 04/08/2014
• Est. Priority Date: 08/28/2003
• Status: Active Grant

• Current Assignee: Satco Products Incorporated
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Nagai, Hideo
• Primary Examiner(s): Ho, Hoang-Quan
• Application Number:
  US13/651,101
• Publication Number:
  US 20130119422A1
• Time in Patent Office: 543 Days
• Field of Search: None
• US Class Current: 257/99
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 : with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.

Claims

1. A semiconductor light emitting device comprising:

a base substrate;

a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, the first conductive layer being disposed on a main surface of the base substrate in such a manner to be positioned closer to the base substrate than the second conductive layer;

a first electrode that is electrically connected to the first conductive layer;

a second electrode that is electrically connected to the second conductive layer;

an insulating film is disposed on each side surface of the multilayer epitaxial structure and part of an upper surface of the multilayer epitaxial structure,

a first conductive film and a second conductive film are disposed on the main surface of the base substrate,

the second conductive film is disposed on one side surface of the insulating film,

a first power feed terminal and a second power feed terminal are disposed on at least one of two main surfaces of the base substrate,

the first electrode is electrically connected to the first power feed terminal via the first conductive film, and

the second electrode is electrically connected to the second power feed terminal via the second conductive film that extends over the insulating film on the side surface and the upper surface of the multilayer epitaxial structure to electrically contact the second electrode on the second conductive layer.

2. The semiconductor light emitting device of claim 1 wherein

the multilayer epitaxial structure having a structural characteristic of epitaxial growth on a single-crystal substrate different from the base substrate, is mounted on the base substrate.

3. The semiconductor light emitting device of claim 1 wherein

the first electrode is formed on a surface of the first conductive layer which faces away from the light emitting layer, and is bonded to a first conductive film formed on the base substrate via a bonding layer.

4. A lighting module including a mounting substrate, wherein

semiconductor light emitting device claimed in claim 1 is mounted on the mounting substrate.

5. A lighting device including the lighting module of claim 4 as a light source.

6. The semiconductor light emitting device of claim 1, wherein

the first power feed terminal and the second power feed terminal are disposed on the other main surface of the base substrate,

a first through hole and a second through hole disposed on the base substrate,

the first electrode is electrically connected to the first power feed terminal via the first conductive film and the first through hole, and

the second electrode is electrically connected to the second power feed terminal via the second conductive film and the second through hole, wherein the second electrode has an L-shaped configuration on the upper surface of the multilayer epitaxial structure.

7. The semiconductor light emitting device of claim 1, wherein

the multilayer epitaxial structure has a diode structure,

the diode structure is divided by grooves,

the insulating film is formed to cover the grooves, and

a thin metal film is formed on the insulating film to connect the first electrode of one of the diode structure to the second electrode of the other diode structure.

8. The semiconductor light emitting device of claim 1, wherein

the multilayer epitaxial structure further includes a light reflective layer which is formed between the first conductive layer and the base substrate.

9. The semiconductor light emitting device of claim 6, wherein

the first through hole is disposed in periphery of the base substrate.

10. The semiconductor light emitting device of claim 1, wherein

the first conductive layer is a p-type semiconductor layer, and the second conductive layer is a n-type semiconductor layer.

11. The semiconductor light emitting device of claim 1, wherein

an eutectic bonding layer is disposed between the base substrate and the multilayer epitaxial structure.

12. The semiconductor light emitting device of claim 6, wherein

the first main surface of the base substrate has a larger area than a main surface of the multilayer epitaxial structure, and

the first through hole and the second through hole are disposed on part of the first main surface of the base substrate, at which the multilayer epitaxial structure is not positioned.

13. The semiconductor light emitting device of claim 1, wherein

depressions are disposed on the second conductive layer.

14. The semiconductor light emitting device of claim 1, wherein

on a bottom surface of the first conductive layer, a high-reflective electrode is disposed in a manner to surround a mirror structure which is positioned on part of the bottom surface of the first conductive layer, and on an upper surface of the second conductive layer, a mirror structure is positioned.

15. The semiconductor light emitting device of claim 1, wherein

a phosphor film is disposed on the upper surface of the multilayer epitaxial structure.

16. The semiconductor light emitting device of claim 15, wherein

the phosphor film is applied at a substantially same thickness.

17. A display element including, as a light source, the semiconductor light emitting device claimed in claim 1.

18. A semiconductor light emitting device comprising:

a base substrate;

a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, the first conductive layer being disposed on a main surface of the base substrate in such a manner to be positioned closer to the base substrate than the second conductive layer, the second conductive layer provides an upper light transmissive surface of the multilayer epitaxial structure;

a first electrode is electrically connected to the first conductive layer;

a second electrode is electrically connected to the second conductive layer;

an insulating film is disposed on each side surface of the multilayer epitaxial structure and also on part of the upper light transmissive surface of the multilayer epitaxial structure;

a first conductive film and a second conductive film are disposed on the main surface of the base substrate,

the second conductive film is disposed on one side surface of the insulating film,

a first power feed terminal and a second power feed terminal are disposed on at least one of two main surfaces of the base substrate,

the first electrode is electrically connected to the first power feed terminal via the first conductive film, and

the second electrode is electrically connected to the second power feed terminal via the second conductive film that extends over the insulating film on the side surface and the upper light transmissive surface of the multilayer epitaxial structure to electrically contact the second electrode on the second conductive layer, wherein the multilayer epitaxial structure having a structural characteristic of epitaxial growth on a single-crystal substrate different from the base substrate on which it is mounted.

19. The semiconductor light emitting device of claim 18, wherein

the first power feed terminal and the second power feed terminal are disposed on the other main surface of the base substrate,

a first through hole and a second through hole disposed on the base substrate,

the first electrode is electrically connected to the first power feed terminal via the first conductive film and the first through hole, and

the second electrode is electrically connected to the second power feed terminal via the second conductive film and the second through hole, wherein the second electrode has an L-shaped configuration on the upper surface of the multilayer epitaxial structure.

20. The semiconductor light emitting device of claim 18, wherein

the multilayer epitaxial structure has a diode structure,

the diode structure has depressions on the surface of the second conductive layer,

the insulating film is formed to cover the depressions, and

a thin metal film is formed on the insulating film to connect the first electrode of one of the diode structure to the second electrode of the other diode structure.