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Recessed memory cell access devices and gate electrodes

  • US 8,692,320 B2
  • Filed: 10/18/2011
  • Issued: 04/08/2014
  • Est. Priority Date: 05/11/2006
  • Status: Active Grant
First Claim
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1. A gate electrode, comprising:

  • a first gate material at least partially within a trench in a semiconductor substrate, the trench lined with a gate-oxide, the first gate material comprising doped polysilicon and having a first work function;

    a second gate material at least partially within the trench and underlying the first gate material, the second gate material comprising another doped polysilicon and having a second work function different from the first work function; and

    a separator between the doped polysilicon and the another doped polysilicon, the separator comprising a metal region.

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