Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
First Claim
1. A semiconductor power device comprising a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein said trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer wherein:
- at least one of the transistor cells having the shielding bottom electrode functioning as a source-connecting shielding bottom electrode electrically connected to a source electrode of the semiconductor power device and at least one of the transistor cells having the shielding bottom electrode functioning as a gate-connecting shielding bottom electrode electrically connected to a gate metal of the semiconductor power device.
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Accused Products
Abstract
A semiconductor power device comprises a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein the trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed in a top portion of the gate trench by an inter-electrode insulation layer. At least one of the transistor cells includes the shielding bottom electrode functioning as a source-connecting shielding bottom electrode electrically connected to a source electrode of the semiconductor power device and at least one of the transistor cells having the shielding bottom electrode functioning as a gate-connecting shielding bottom electrode electrically connected to a gate metal of the semiconductor power device.
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Citations
13 Claims
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1. A semiconductor power device comprising a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein said trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer wherein:
at least one of the transistor cells having the shielding bottom electrode functioning as a source-connecting shielding bottom electrode electrically connected to a source electrode of the semiconductor power device and at least one of the transistor cells having the shielding bottom electrode functioning as a gate-connecting shielding bottom electrode electrically connected to a gate metal of the semiconductor power device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
Specification