Multi-functional polishing pad

• US 8,697,239 B2
• Filed: 07/24/2009
• Issued: 04/15/2014
• Est. Priority Date: 07/24/2009
• Status: Active Grant

• Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Original Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Inventors: Kulp, Mary Jo, Simon, Ethan Scott
• Primary Examiner(s): Shosho, Callie
• Assistant Examiner(s): Fung, Coris
• Application Number:
  US12/460,809
• Publication Number:
  US 20110021123A1
• Time in Patent Office: 1,726 Days
• Field of Search: 428/423.1
• US Class Current: 428/423.1
• CPC Class Codes: B24B 37/24 characterised by the composition or properties of the pad materials
• CPC Class Codes: B24D 3/32 for porous or cellular structure
• CPC Class Codes: B24D 3/34 characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
• CPC Class Codes: C08G 18/12 using two or more compounds having active hydrogen in the first polymerisation step
• CPC Class Codes: C08G 18/3814 Polyamines
• CPC Class Codes: C08G 18/4808 Mixtures of two or more polyetherdiols
• CPC Class Codes: C08G 18/4854 Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
• CPC Class Codes: C08G 18/7621 being toluene diisocyanate including isomer mixtures
• CPC Class Codes: C08G 2101/00 Manufacture of cellular products
• CPC Class Codes: C08K 7/22 Expanded, porous or hollow particles
• CPC Class Codes: Y10T 428/31551 Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]

Abstract

The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer.

Claims

1. A polishing pad suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten, the polishing pad comprising a polymeric matrix, the polymeric matrix consisting of a polyurethane reaction product consisting of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate, the polyol blend being a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol and the mixture of polypropylene glycol and polytetrarnethylene ether glycol having a weight ratio of the polypropylene glycol. to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio, the polyamine or polyamine mixture being 8 to 50 weight percent in a liquid mixture, and the toluene diisocyanate being 20 to 30 weight percent total toluene diisocyanate monomer or partially reacted toluene diisocyanate monomer, all based on the total weight of the polymeric matrix.

2. The polishing pad of claim 1 wherein the weight ratio of the polypropylene glycol to the polytetramethylene ether glycol is from 2 to 1 to 1 to 2.

3. The polishing pad of claim 1 wherein the weight ratio of the polypropylene glycol to the polytetramethylene ether glycol is from 20 to 1 to 2 to 1.

4. The polishing pad of claim 1 wherein the weight ratio of the polypropylene glycol to the polytetramethylene ether glycol is from 1 to 20 to 1 to 2.

5. The polishing pad of claim 1 wherein the polishing pad has a Shore D hardness of 20 to 70.

6. A polishing pad suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten, the polishing pad comprising a polymeric matrix, the polymeric matrix consisting of a polyurethane reaction product consisting of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate, the polyol blend being a mixture of 20 to 75 weight percent total polypropylene glycol and polytetramethylene ether glycol and the mixture of polypropylene glycol and polytetrarnethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 15 to 1 ratio to a 1 to 15 ratio, the polyamine or polyamine mixture being 10 to 45 weight percent in a liquid mixture, and the toluene diisocyanate being 20 to 30 weight percent total toluene diisocyanate monomer or partially reacted toluene diisocyanate monomer, all based on the total weight of the polymeric matrix.

7. The polishing pad of claim 6 wherein the weight ratio of the polypropylene glycol to the polytetramethylene ether glycol is from 15 to 1 to 2 to 1.

8. The polishing pad of claim 6 wherein the weight ratio of the polypropylene glycol to the polytetramethylene ether glycol is from 1 to 15 to 1 to 2.

9. The polishing pad of claim 6 wherein the polishing pad has a Shore D hardness of 20 to 70.