Method for ion implant using grid assembly
First Claim
1. A method of ion implantation comprising:
- providing a plasma within a plasma region of a chamber;
providing a grid assembly comprising a plurality of grid plates, wherein each grid plate comprises a plurality of apertures;
flowing a first set of ions from the plasma in the plasma region through the apertures in each of the grid plates in the grid assembly while each of the grid plates is positioned in its respective first position;
homogeneously implanting a substrate with at least a portion of the first set of ions that flowed through the apertures in the grid plates while the substrate is supported in its respective first position by a substrate holder, thereby forming a single laterally-homogeneous ion implantation across the substrate from a combination of the first set of ions that have passed through different apertures of the same grid plate;
adjusting the position of the substrate or at least one of the grid plates to a respective second position and thereafter flowing a second set of ions from the plasma in the plasma region through the apertures in each of the grid plates in the grid assembly and selectively implanting the substrate with at least a portion of the second set of ions that flowed through the apertures in the grid plates, thereby forming a plurality of laterally spaced-apart ion implantations on the substrate from a portion of the second set of ions that have passed through different apertures of the same grid plate.
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Abstract
A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate.
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Citations
24 Claims
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1. A method of ion implantation comprising:
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providing a plasma within a plasma region of a chamber; providing a grid assembly comprising a plurality of grid plates, wherein each grid plate comprises a plurality of apertures; flowing a first set of ions from the plasma in the plasma region through the apertures in each of the grid plates in the grid assembly while each of the grid plates is positioned in its respective first position; homogeneously implanting a substrate with at least a portion of the first set of ions that flowed through the apertures in the grid plates while the substrate is supported in its respective first position by a substrate holder, thereby forming a single laterally-homogeneous ion implantation across the substrate from a combination of the first set of ions that have passed through different apertures of the same grid plate; adjusting the position of the substrate or at least one of the grid plates to a respective second position and thereafter flowing a second set of ions from the plasma in the plasma region through the apertures in each of the grid plates in the grid assembly and selectively implanting the substrate with at least a portion of the second set of ions that flowed through the apertures in the grid plates, thereby forming a plurality of laterally spaced-apart ion implantations on the substrate from a portion of the second set of ions that have passed through different apertures of the same grid plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification