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Laminating system

  • US 8,698,156 B2
  • Filed: 03/13/2009
  • Issued: 04/15/2014
  • Est. Priority Date: 06/02/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an integrated circuit disposed between a first substrate and a second substrate, the integrated circuit comprising;

    a first insulating film;

    a thin film transistor over the first insulating film;

    a conductive layer over the thin film transistor; and

    a second insulating film over the thin film transistor;

    wherein the integrated circuit is sealed with the first and the second substrate and the first substrate is in direct contact with the second substrate at a region outside the integrated circuit,wherein either or both of the first substrate and the second substrate are coated with a conductive material.

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