Electro-optical apparatus and electronic apparatus
First Claim
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1. An electro-optical apparatus, comprising:
- a transistor; and
a capacitance element electrically connected to the transistor,wherein the capacitance element includes;
a first capacitance electrode formed over the transistor with an insulating interlayer therebetween;
a second capacitance electrode formed so as to oppose the first capacitance electrode with a first capacitance insulation layer therebetween, the second capacitance electrode being electrically connected to a semiconductor layer of the transistor through a contact hole formed in the insulating interlayer,the second capacitance electrode includes a first conductive layer and a second conductive layer stacked on the first conductive layer,a portion of the first conductive layer overlapping the contact hole is removed, and the second conductive layer and the semiconductor layer of the transistor are electrically connected to each other through the contact hole,a second capacitance insulation layer formed on the second capacitance electrode on the side thereof opposite the first capacitance insulation layer, anda third capacitance electrode disposed so as to oppose the second capacitance electrode with the second capacitance insulation layer therebetween,a first insulation layer formed so as to cover an end portion of the first capacitance electrode, the first insulation layer being formed at a position between the end portion of the first capacitance electrode and the first conductive layer of the second capacitance electrode, anda second insulation layer formed so as to cover an end portion of the second capacitance electrode, the second insulation layer being formed at a position between the second conductive layer of the second capacitance electrode and the third capacitance electrode.
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Abstract
A capacitance element includes a first capacitance electrode formed over a TFT with a insulating interlayer therebetween, and a second capacitance electrode formed so as to oppose the first capacitance electrode with a first dielectric layer therebetween, the second capacitance electrode being electrically connected to a semiconductor layer of the TFT through a contact hole formed in the insulating interlayer. The second capacitance electrode includes a first conductive layer and a second conductive layer stacked on the first conductive layer. A portion of the first conductive layer overlapping the contact hole is removed, and the second conductive layer and the semiconductor layer are electrically connected to each other through the contact hole.
240 Citations
3 Claims
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1. An electro-optical apparatus, comprising:
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a transistor; and a capacitance element electrically connected to the transistor, wherein the capacitance element includes; a first capacitance electrode formed over the transistor with an insulating interlayer therebetween; a second capacitance electrode formed so as to oppose the first capacitance electrode with a first capacitance insulation layer therebetween, the second capacitance electrode being electrically connected to a semiconductor layer of the transistor through a contact hole formed in the insulating interlayer, the second capacitance electrode includes a first conductive layer and a second conductive layer stacked on the first conductive layer, a portion of the first conductive layer overlapping the contact hole is removed, and the second conductive layer and the semiconductor layer of the transistor are electrically connected to each other through the contact hole, a second capacitance insulation layer formed on the second capacitance electrode on the side thereof opposite the first capacitance insulation layer, and a third capacitance electrode disposed so as to oppose the second capacitance electrode with the second capacitance insulation layer therebetween, a first insulation layer formed so as to cover an end portion of the first capacitance electrode, the first insulation layer being formed at a position between the end portion of the first capacitance electrode and the first conductive layer of the second capacitance electrode, and a second insulation layer formed so as to cover an end portion of the second capacitance electrode, the second insulation layer being formed at a position between the second conductive layer of the second capacitance electrode and the third capacitance electrode. - View Dependent Claims (2, 3)
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Current AssigneeSeiko Epson Corporation (Seiko Group)
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Original AssigneeSeiko Epson Corporation (Seiko Group)
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InventorsHanamura, Yoshikazu
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Primary Examiner(s)Au, Bac
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Assistant Examiner(s)NGUYEN, SOPHIA T
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Application NumberUS13/613,954Publication NumberTime in Patent Office579 DaysField of Search257/59, 257/72, 257/203, 257/71, 257/79, 349/114, 349/147US Class Current257/71CPC Class CodesH01L 27/1255 integrated with passive dev...
