Semiconductor light emitting device
First Claim
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1. A semiconductor light-emitting device, comprising:
- a light-emitting structure comprising an active layer capable of emitting light and located between a first type semiconductor layer and a second type semiconductor layer, and a transparent substrate on the first type semiconductor layer, having a first surface and a second surface opposite to the first surface, wherein the first surface is closer to the active layer than the second surface;
a transparent carrier located on the second surface of the transparent substrate for carrying the light-emitting structure and distinguishing from the light-emitting structure, having a third surface and a fourth surface opposite to the third surface, wherein the third surface is closer to the active layer than the fourth surface, wherein light emitting from the active layer is capable of escaping from a lateral surface of the transparent carrier; and
a reflection layer located on the fourth surface;
wherein the light-emitting structure is projected from the transparent carrier, the area of the third surface is not less than each area of the first surface and the second surface and an area ratio of the fourth surface to the active layer is between 4 and 8.
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Abstract
This invention relates to a semiconductor light-emitting device including a semiconductor light-emitting chip and a transparent carrier. The semiconductor light-emitting chip includes an active layer and transparent substrate. The active layer emits light under a bias. At least a portion of the light emitted from the active layer enters into the transparent carrier through the transparent substrate. The semiconductor light-emitting chip is coupled to the transparent carrier through the transparent substrate. The area of the transparent carrier is larger than that of the active layer.
27 Citations
20 Claims
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1. A semiconductor light-emitting device, comprising:
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a light-emitting structure comprising an active layer capable of emitting light and located between a first type semiconductor layer and a second type semiconductor layer, and a transparent substrate on the first type semiconductor layer, having a first surface and a second surface opposite to the first surface, wherein the first surface is closer to the active layer than the second surface; a transparent carrier located on the second surface of the transparent substrate for carrying the light-emitting structure and distinguishing from the light-emitting structure, having a third surface and a fourth surface opposite to the third surface, wherein the third surface is closer to the active layer than the fourth surface, wherein light emitting from the active layer is capable of escaping from a lateral surface of the transparent carrier; and a reflection layer located on the fourth surface; wherein the light-emitting structure is projected from the transparent carrier, the area of the third surface is not less than each area of the first surface and the second surface and an area ratio of the fourth surface to the active layer is between 4 and 8. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A backlight module, comprising:
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a light-emitting structure comprising an active layer capable of emitting light and located between a first type semiconductor layer and a second type semiconductor layer and a transparent substrate located on the first type semiconductor layer, having a first surface and a second surface opposite to the first surface, wherein the first surface is closer to the active layer than the second surface; a transparent carrier located on the second surface of the transparent substrate for carrying the light-emitting structure and distinguishing from the light-emitting structure, having a third surface and a fourth surface opposite to the first surface, wherein the third surface is closer to the active layer than the fourth surface, wherein light emitting from the active layer is capable of escaping from a lateral surface of the transparent carrier; a reflection layer located on one side of the transparent carrier opposite to the light-emitting structure; a base coupled to the transparent carrier; an anode support connected to the base; and a cathode support connected to the base; wherein the transparent substrate is attached to the transparent carrier by a material transparent relative to light from the active layer; wherein the area of the third surface is not less than each area of the first surface and the second surface, and the area ratio of the fourth surface to the active layer is between 4 and 8; wherein an anode and a cathode of the light-emitting structure are electrically connected to the anode support and the cathode support. - View Dependent Claims (20)
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Specification