Semiconductor device including a voltage controlled termination structure and method for fabricating same
First Claim
1. A semiconductor device including a voltage controlled termination structure, said semiconductor device comprising:
- an active area including a base region of a first conductivity type formed in a semiconductor body of a second conductivity type formed over a first major surface of a substrate of said second conductivity type;
a termination region formed adjacent said active area and including said voltage controlled termination structure and at least one termination trench having a conductive trench filler disposed therein, said voltage controlled termination structure extending through said base region into said semiconductor body of said second conductivity type;
said voltage controlled termination structure comprising an electrode electrically connected to one of a gate electrode and a source region of said semiconductor device;
said at least one termination trench being floating.
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Accused Products
Abstract
According to one embodiment, a semiconductor device including a voltage controlled termination structure comprises an active area including a base region of a first conductivity type formed in a semiconductor body of a second conductivity type formed over a first major surface of a substrate of the second conductivity type, a termination region formed in the semiconductor body adjacent the active area and including the voltage controlled termination structure. The voltage controlled termination structure includes an electrode electrically connected to a terminal of the semiconductor device. In one embodiment, the electrode of the voltage controlled termination structure is electrically connected to a gate terminal of the semiconductor device. In one embodiment, the electrode of the voltage controlled termination structure is electrically connected to a source terminal of the semiconductor device.
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Citations
20 Claims
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1. A semiconductor device including a voltage controlled termination structure, said semiconductor device comprising:
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an active area including a base region of a first conductivity type formed in a semiconductor body of a second conductivity type formed over a first major surface of a substrate of said second conductivity type; a termination region formed adjacent said active area and including said voltage controlled termination structure and at least one termination trench having a conductive trench filler disposed therein, said voltage controlled termination structure extending through said base region into said semiconductor body of said second conductivity type; said voltage controlled termination structure comprising an electrode electrically connected to one of a gate electrode and a source region of said semiconductor device; said at least one termination trench being floating. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A trench metal-oxide-semiconductor field-effect transistor (MOSFET) including a voltage controlled termination structure, said trench MOSFET comprising:
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an active area including an insulated gate trench and a highly doped source region, formed in a base region of a first conductivity type formed over a drift body of a second conductivity type; a termination region adjacent said active area and including said voltage controlled termination structure and at least one termination trench having a conductive trench filler disposed therein; said voltage controlled termination structure extending through said base region into said drift body and comprising an electrode electrically connected to one of a gate electrode and said highly doped source region of said trench MOSFET; said at least one termination trench being floating. - View Dependent Claims (10, 11, 12)
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13. A method for fabricating a semiconductor device including a voltage controlled termination structure, said method comprising:
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forming an active area including a base region of a first conductivity type in a semiconductor body of a second conductivity type formed over a first major surface of a substrate of said second conductivity type; establishing a termination region including said voltage controlled termination structure and at least one termination trench having a conductive trench filler disposed therein in said semiconductor body adjacent said active area, said voltage controlled termination structure extending through said base region into said semiconductor body of said second conductivity type; electrically connecting an electrode of said voltage controlled termination structure to a terminal of said semiconductor device; said at least one termination trench being floating. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification