Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method

• US 8,698,244 B2
• Filed: 12/10/2009
• Issued: 04/15/2014
• Est. Priority Date: 11/30/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: International Business Machines Corporation
• Inventors: Botula, Alan B., Ellis-Monaghan, John J., Joseph, Alvin J., Levy, Max G., Phelps, Richard A., Slinkman, James A., Wolf, Randy L.
• Primary Examiner(s): Tran, Thanh Y
• Application Number:
  US12/634,893
• Publication Number:
  US 20110131542A1
• Time in Patent Office: 1,587 Days
• Field of Search: 257/E29.287, 257/347, 257/348, 257/349, 257/350, 257/351, 257/352, 257/353, 257/354, 438/149, 438/150, 438/151, 438/152, 438/153, 438/154, 438/155, 438/156, 438/157, 438/158, 438/159, 438/160, 438/161, 438/162, 438/163, 438/164, 438/165, 438/166, 438/295, 438/311, 438/404, 438/405, 438/406, 438/407, 438/408, 438/409, 438/450, 438/451, 438/452, 438/453, 438/454, 438/455, 438/456, 438/457, 438/458, 438/459, 438/479, 438/480, 438/481, 438/967
• US Class Current: 257/347
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26533 of electrically inactive species in silicon to make buried insulating layers
• CPC Class Codes: H01L 21/3223 using cavities formed by hydrogen or noble gas ion implantation
• CPC Class Codes: H01L 21/3226 of silicon on insulator
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

Disclosed is semiconductor structure with an insulator layer on a semiconductor substrate and a device layer is on the insulator layer. The substrate is doped with a relatively low dose of a dopant having a given conductivity type such that it has a relatively high resistivity. Additionally, a portion of the semiconductor substrate immediately adjacent to the insulator layer can be doped with a slightly higher dose of the same dopant, a different dopant having the same conductivity type or a combination thereof. Optionally, micro-cavities are created within this same portion so as to balance out any increase in conductivity with a corresponding increase in resistivity. Increasing the dopant concentration at the semiconductor substrate-insulator layer interface raises the threshold voltage (Vt) of any resulting parasitic capacitors and, thereby reduces harmonic behavior. Also disclosed herein are embodiments of a method and a design structure for such a semiconductor structure.

Claims

1. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing a semiconductor structure, said semiconductor structure comprising:

a semiconductor substrate having a first surface and a second surface above said first surface;

an insulator layer on said semiconductor substrate immediately adjacent to said second surface; and

,

multiple semiconductor devices on said insulator layer,

said semiconductor substrate comprising;

a first portion immediately adjacent to said first surface and comprising, in a first concentration, a dopant having a given conductivity type such that said first portion has said given conductivity type; and

,

a second portion extending vertically from immediately adjacent said first portion to immediately adjacent said second surface and further extending laterally and continuously at said second surface so as to traverse below each of said multiple semiconductor devices, said second portion comprising, said dopant in a second concentration greater than said first concentration such that all of said second portion has said given conductivity type at a higher conductivity level than in said first portion.

2. The design structure of claim 1, said first portion having a resistance of at least 10 ohm-centimeters (Ω

-cm) and said second portion having a sheet resistance of at least 1×

10³ ohms per square (Ω

/□

).

3. The design structure of claim 1, said second portion comprising an implant region.

4. The design structure of claim 1, said semiconductor substrate comprising a multi-layer semiconductor structure, said first portion comprising a first semiconductor layer and said second portion comprising a second semiconductor layer on said first semiconductor layer.

5. The design structure of claim 4, said first semiconductor layer comprising a silicon layer and said second semiconductor layer comprising any of a second silicon layer and a polysilicon layer.

6. The design structure claim 1, said semiconductor structure further comprising a device layer on said insulator layer.

7. The design structure of claim 1, said second portion suppressing formation of a parasitic inversion charge layer at said second surface and, thereby reducing harmonic behavior.

8. The design structure of claim 1, wherein said design structure further comprises a netlist.

9. The design structure of claim 1, wherein said design structure resides on storage medium as a data format used for an exchange of layout data of integrated circuits.

10. The design structure of claim 1, wherein said design structure resides in a programmable gate array.

11. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing a semiconductor structure, said semiconductor structure comprising:

a semiconductor substrate having a first surface and a second surface above said first surface;

an insulator layer on said semiconductor substrate immediately adjacent to said second surface; and

,

multiple semiconductor devices on said insulator layer,

said semiconductor substrate comprising;

a first portion immediately adjacent to said first surface and comprising, in a first concentration, a dopant having a given conductivity type such that said first portion has said given conductivity type; and

,

a second portion extending vertically from immediately adjacent said first portion to immediately adjacent said second surface and further extending laterally and continuously at said second surface so as to traverse below each of said multiple semiconductor devices,

said second portion comprising a plurality of microcavities, and

said second portion further comprising, in a second concentration greater than said first concentration, any one of a same dopant as said dopant in said first portion, a different dopant than said dopant in said first portion and having said given conductivity type, and a combination of said same dopant as said dopant in said first portion and said different dopant than said dopant in said first portion such that said second portion has said given conductivity type at a higher conductivity level than said first portion.

12. The design structure of claim 11, said first portion having a resistance of at least 10 ohm-centimeters (Ω

-cm) and said second portion having a sheet resistance of at least 1×

10³ ohms per square (Ω

/□

).

13. The design structure of claim 11, said second portion comprising an implant region.

14. The design structure of claim 11, said semiconductor substrate comprising a multi-layer semiconductor structure, said first portion comprising a first semiconductor layer and said second portion comprising a second semiconductor layer on said first semiconductor layer.

15. The design structure of claim 11, further comprising a device layer on said insulator layer.

16. The design structure of claim 11, said second portion suppressing formation of a parasitic inversion charge layer at said first surface and, thereby reducing harmonic behavior.

17. The design structure of claim 11, wherein said design structure further comprises a netlist.

18. The design structure of claim 11, wherein said design structure resides on storage medium as a data format used for an exchange of layout data of integrated circuits.

19. The design structure of claim 11, wherein said design structure resides in a programmable gate array.

20. A design structure for a semiconductor structure, said design structure comprising information, including data and instructions, embodied in a storage medium readable by a computer that processes said data and executes said instructions to produce any one of said semiconductor structure and a simulation of said semiconductor structure, said semiconductor structure comprising:

a semiconductor substrate having a first surface and a second surface above said first surface, said semiconductor substrate comprising;

a first portion immediately adjacent to said first surface and comprising, in a first concentration, a dopant having a given conductivity type such that said first portion has said given conductivity type; and

a second portion extending from immediately adjacent said first portion to immediately adjacent said second surface, said second portion comprising, in a second concentration greater than said first concentration, a combination of a same dopant as said dopant in said first portion and a different dopant than said dopant in said first portion, said different dopant having said given conductivity type such that said second portion has said given conductivity type at a higher conductivity level than said first portion;

an insulator layer on said semiconductor substrate immediately adjacent to said second surface; and

multiple semiconductor devices on said insulator layer, said first portion and said second portion each extending laterally under said multiple semiconductor devices.