Semiconductor package with integrated metal pillars and manufacturing methods thereof
First Claim
1. A semiconductor package, comprising:
- a substrate; and
a semiconductor device comprising;
a body having a center;
a first layer disposed adjacent to the body, wherein the first layer defines a plurality of openings; and
a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate, each of the plurality of conductive pillars extending at least partially through a corresponding one of the plurality of openings;
wherein an offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body; and
wherein the second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body.
1 Assignment
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Accused Products
Abstract
A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each of the plurality of conductive pillars extends at least partially through a corresponding one of the plurality of openings. An offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body. The second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body.
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Citations
20 Claims
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1. A semiconductor package, comprising:
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a substrate; and a semiconductor device comprising; a body having a center; a first layer disposed adjacent to the body, wherein the first layer defines a plurality of openings; and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate, each of the plurality of conductive pillars extending at least partially through a corresponding one of the plurality of openings; wherein an offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body; and wherein the second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor package, comprising:
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a substrate; and a semiconductor device comprising; a body having a center; a pad disposed adjacent to the body; a first layer disposed adjacent to the body, wherein the first layer defines an opening having a first diameter and exposing the pad; and a conductive pillar electrically connected to the pad and extending at least partially into the opening, wherein the conductive pillar has a second diameter, and the second diameter is at least twice as large as the first diameter; wherein a central axis of the conductive pillar is offset with respect to a central axis of the opening based on a distance between the central axis of the opening and the center of the body. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor package, comprising:
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a substrate; and a semiconductor device comprising; a body; a dielectric layer disposed adjacent to the body, wherein the dielectric layer is subject to stress resulting from a mismatch of coefficient of thermal expansion (CTE) between the substrate and the semiconductor device; a passivation layer disposed adjacent to the body, wherein the passivation layer defines an opening; and means for reducing a maximum stress on the dielectric layer to protect the dielectric layer from at least one of cracking and delamination, wherein the means for reducing the maximum stress on the dielectric layer includes a conductive pillar extending at least partially into the opening, wherein a first central axis of the opening is offset from a second central axis of the conductive pillar. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification