Semiconductor device

• US 8,698,521 B2
• Filed: 05/15/2012
• Issued: 04/15/2014
• Est. Priority Date: 05/20/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nishijima, Tatsuji
• Primary Examiner(s): Chang, Daniel D
• Application Number:
  US13/472,018
• Publication Number:
  US 20120293204A1
• Time in Patent Office: 700 Days
• Field of Search: 326/112, 326/119, 326/121, 326/122, 257/9, 257/14
• US Class Current: 326/112
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H03K 19/0944 using MOSFET or insulated gate field-effect transistors, i.e. IGFETH03K19/096 takes precedence
• CPC Class Codes: H03K 19/20 characterised by logic function, e.g. AND, OR, NOR, NOT circuits H03K19/003 - H03K19/01 take precedence

Abstract

A semiconductor device in which a transistor using an oxide semiconductor containing In, Zn, or the like for a channel region can be driven like a p-channel transistor is provided. The semiconductor device includes a transistor and an inverter, wherein an output of the inverter is input to a gate of the transistor, a channel region of the transistor includes an oxide semiconductor film containing In, Zn, or Sn, and each channel region of transistors in the inverter contains silicon. When a high voltage is input to the inverter, a low voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned off. When a low is input to the inverter, a high voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned on.

Claims

1. A semiconductor device comprising:

a first transistor;

a second transistor; and

an inverter,

wherein an output of the inverter is input to a gate of the first transistor,

wherein an input to the inverter is input to a gate of the second transistor,

wherein each of a channel region of the first transistor and a channel region of the second transistor includes an oxide semiconductor film containing at least one of In, Zn, and Sn,

wherein a channel region of a third transistor included in the inverter contains silicon,

wherein when a high voltage is input to the inverter and the gate of the second transistor, a low voltage is output from the inverter and is input to the gate of the first transistor, so that the first transistor is turned off and the second transistor is turned on, and

wherein when a low voltage is input to the inverter and the gate of the second transistor, a high voltage is output from the inverter and is input to the gate of the first transistor, so that the first transistor is turned on and the second transistor is turned off.

2. The semiconductor device according to claim 1, wherein the first transistor, the second transistor and the inverter are provided over a substrate.

3. The semiconductor device according to claim 2, wherein the substrate is a glass substrate, a quartz substrate, a semiconductor substrate, or a ceramic substrate.

4. An electronic device comprising the semiconductor device according to claim 1.

5. An electronic device comprising a display portion comprising the semiconductor device according to claim 1.

6. A semiconductor device comprising:

a first transistor;

a second transistor;

a first inverter; and

a second inverter,

wherein an output of the first inverter is input to a gate of the first transistor,

wherein an output of the second inverter is input to the first inverter and a gate of the second transistor,

wherein each of a channel region of the first transistor and a channel region of the second transistor includes an oxide semiconductor film containing at least one of In, Zn, and Sn,

wherein each of a channel region of a third transistor included in the first inverter and a channel region of a fourth transistor included in the second inverter contains silicon,

wherein when a high voltage is input to the second inverter, a low voltage is output from the second inverter and is input to the first inverter and the gate of the second transistor, and then the high voltage is output from the first inverter and is input to the gate of the first transistor, so that the first transistor is turned on and the second transistor is turned off, and

wherein when a low voltage is input to the second inverter, a high voltage is output from the second inverter and is input to the first inverter and the gate of the second transistor, and then the low voltage is output from the first inverter and is input to the gate of the first transistor, so that the first transistor is turned off and the second transistor is turned on.

7. The semiconductor device according to claim 6, wherein the first transistor, the second transistor, the first inverter, and the second inverter are provided over a substrate.

8. The semiconductor device according to claim 7, wherein the substrate is a glass substrate, a quartz substrate, a semiconductor substrate, or a ceramic substrate.

9. An electronic device comprising the semiconductor device according to claim 6.

10. An electronic device comprising a display portion comprising the semiconductor device according to claim 6.