Surface-emitting laser device and surface-emitting laser array including same
First Claim
1. A surface-emitting laser device, comprising:
- a substrate connected to a heat sink;
a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate;
a first cavity spacer layer formed in contact with the first reflective layer;
an active layer formed in contact with the first cavity spacer layer;
a second cavity spacer layer formed in contact with the active layer; and
a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer,wherein the first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than a thermal conductivity of a semiconductor material forming the second cavity spacer layer, andwherein a thermal conductivity of a semiconductor material of a low refractive index layer in the first reflective layer closest to the active layer is greater than a thermal conductivity of a semiconductor material of a low refractive index layer in the second reflective layer closest to the active layer.
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Abstract
A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.
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Citations
16 Claims
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1. A surface-emitting laser device, comprising:
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a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer, wherein the first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than a thermal conductivity of a semiconductor material forming the second cavity spacer layer, and wherein a thermal conductivity of a semiconductor material of a low refractive index layer in the first reflective layer closest to the active layer is greater than a thermal conductivity of a semiconductor material of a low refractive index layer in the second reflective layer closest to the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A surface-emitting laser device, comprising:
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a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer, wherein the active layer includes a well layer formed of GaaIn1-aPbAs1-b (0≦
a≦
1, 0≦
b≦
1); anda barrier layer formed of (GacIn1-c)dP1-dAs (0≦
c≦
1, 0≦
d≦
1) having a band gap greater than a band gap of the well layer;the first reflective layer includes a plurality of low refractive index layers formed of AlxGa1-xAs (0<
x≦
1); anda plurality of high refractive index layers formed of AlyGa1-yAs (0<
y≦
x<
1);a part of the second cavity spacer layer is formed of (AleGa1-e)fIn1-fP (0<
e≦
1, 0≦
f≦
1); andthe first cavity spacer layer includes a semiconductor material at a symmetric position of a position at which the second cavity spacer layer includes said (AleGa1-e)fIn1-fP with respect to the active layer, the semiconductor material having a thermal conductivity greater than a thermal conductivity of said (AleGa1-e)fIn1-fP. - View Dependent Claims (15, 16)
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Specification