Semiconductor device and manufacturing method thereof

• US 8,703,549 B2
• Filed: 02/25/2013
• Issued: 04/22/2014
• Est. Priority Date: 05/13/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Lee, Je-Hun, Kim, Do-Hyun, Ihn, Tae-Hyung
• Primary Examiner(s): CAMPBELL, SHAUN M
• Application Number:
  US13/775,777
• Publication Number:
  US 20130168669A1
• Time in Patent Office: 421 Days
• Field of Search: 438/104, 438/149, 438/592, 438/795, 257/43, 257/E21.411, 257/E21.413, 257/E51.005
• US Class Current: 438/149
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

forming a gate electrode over a substrate;

forming an insulating layer covering the gate electrode;

forming an oxide semiconductor layer over the insulating layer;

forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising an alloy of first and second elements, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

oxidizing the first element near an interface region between the first conductive layer and the oxide semiconductor layer.

2. A semiconductor device, comprising:

an oxide semiconductor layer;

a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising an alloy of first and second elements, the first element being oxidized near an interface region between the first conductive layer and the oxide semiconductor layer, the oxidized first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer; and

a second conductive layer on the first conductive layer, the second conductive layer comprising the second element and not comprising the first element.

3. The semiconductor device of claim 2, wherein the second conductive layer has higher crystallinity than the first conductive layer.

4. The semiconductor device of claim 2, wherein the first element comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, and W.

5. The semiconductor device of claim 2, wherein the oxide semiconductor layer comprises at least one of zinc oxide, cadmium oxide, indium oxide, tin oxide, and hafnium oxide.

6. The semiconductor device according to claim 2, wherein the oxide semiconductor layer comprises at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, B, Ga, In, Ti, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, CI, Br, and I.

9. A display panel including the semiconductor device of claim 2.

7. A semiconductor device, comprising:

a substrate;

an oxide semiconductor layer on the substrate;

a first conductive layer on the oxide semiconductor layer, the oxide semiconductor layer comprising an alloy of first and second elements, the first element being oxidized near an interface region between the first conductive layer and the oxide semiconductor layer, the oxidized first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

a second conductive layer on the first conductive layer, the second conductive layer comprising the second element;

an insulating layer on the second conductive layer; and

a gate electrode on the insulating layer,

wherein the gate electrode comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, Nb, and W.

8. A semiconductor device, comprising:

a substrate;

a gate electrode on the substrate;

an insulating layer covering the gate electrode;

an oxide semiconductor layer on the insulating layer;

a first conductive layer on the insulating later, the first conductive layer comprising an alloy of first and second elements, the first element being oxidized near an interface region between the first conductive layer and the oxide semiconductor layer, the oxidized first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer; and

a second conductive layer on the first conductive layer, the second conductive layer comprising the second element.