Methods of fabricating substrates
First Claim
1. A method of forming a pattern on a substrate, comprising:
- forming spaced first features and spaced second features over a substrate, the first and second features alternating with one another and being spaced relative one another;
laterally trimming width of the spaced second features to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features;
after the laterally trimming, forming spacers on sidewalls of the spaced first features and on sidewalls of the spaced second features, the spacers being of some different composition from that of the spaced first features and from that of the spaced second features; and
after forming the spacers, removing the spaced first features and the spaced second features from the substrate.
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Accused Products
Abstract
A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed.
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Citations
37 Claims
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1. A method of forming a pattern on a substrate, comprising:
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forming spaced first features and spaced second features over a substrate, the first and second features alternating with one another and being spaced relative one another; laterally trimming width of the spaced second features to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features; after the laterally trimming, forming spacers on sidewalls of the spaced first features and on sidewalls of the spaced second features, the spacers being of some different composition from that of the spaced first features and from that of the spaced second features; and after forming the spacers, removing the spaced first features and the spaced second features from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a pattern on a substrate, comprising:
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forming spaced first features over a substrate; depositing a first material over the spaced first features which is of some different composition from that of the spaced first features; depositing a second material over the first material, the second material being of some different composition from that of the first material; removing only a portion of the second material to expose the first material and form spaced second material received over the first material; after forming the spaced second material, etching the first material from between the spaced second material and forming spaced second features which comprise spaced second material received over first material, the second features being spaced from the first features; after the etching of the first material, laterally trimming width of the spaced second features; after the laterally trimming, forming spacers on sidewalls of the spaced first features and on sidewalls of the spaced second features, the spacers being of some different composition from that of the spaced first features and from that of the spaced second features; and after forming the spacers, removing the first features and the second features from the substrate. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of forming a pattern on a substrate, comprising:
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forming spaced first features over a substrate; depositing a first material over the spaced first features which is of some different composition from that of the spaced first features; depositing a second material over the first material, the second material being of some different composition from that of the first material; removing only a portion of the second material to expose the first material and form spaced second material received over the first material; after forming the spaced second material, etching the first material from between the spaced second material and forming spaced second features which comprise spaced second material received over first material, the second features being spaced from the first features; after the etching of the first material, laterally trimming width of the spaced second features; after the laterally trimming, depositing an alterable material over the spaced first features and the spaced second features and altering the alterable material with material from the spaced first features and with material from the spaced second features to form altered material on sidewalls of the spaced first features and on sidewalls of the spaced second features; and after the altering, removing the first features and the second features from the substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of forming a pattern on a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features; depositing a first material over the altered material which is of some different composition from that of the altered material; removing only a portion of the first material to expose the altered material and form spaced first material; after forming the spaced first material, etching the altered material from between the spaced first material and the spaced first features; after the etching of the altered material, laterally trimming width of the spaced first material; after the laterally trimming, forming anisotropically etched spacers on sidewalls of the spaced first features and on sidewalls of the spaced first material, the anisotropically etched spacers being of some different composition from that of the spaced first features and from that of the spaced first material; and after forming the anisotropically etched spacers, removing the spaced first features and the spaced first material from the substrate. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A method of forming a pattern on a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering only some of the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features and leave alterable material elevationally over and between the altered material; after the alternating, removing only a portion of the alterable material to expose the altered material and form spaced alterable material; after forming the spaced alterable material, etching the altered material from between the spaced alterable material and the spaced first features; after the etching of the altered material, laterally trimming width of the spaced alterable material; after the laterally trimming, forming anisotropically etched spacers on sidewalls of the spaced first features and on sidewalls of the spaced alterable material, the anisotropically etched spacers being of some different composition from that of the spaced first features and from that of the spaced alterable material; and after forming the anisotropically etched spacers, removing the spaced first features and the spaced alterable material from the substrate.
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35. A method of forming a pattern on a substrate, comprising:
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forming spaced first features over a substrate; depositing a first alterable material over the spaced first features and altering the first alterable material with material from the spaced first features to form first altered material on sidewalls of the spaced first features; depositing a first material over the first altered material which is of some different composition from that of the first altered material; removing only a portion of the first material to expose the first altered material and form spaced first material; after forming the spaced first material, etching the first altered material from between the spaced first material and the spaced first features; after the etching of the first altered material, laterally trimming width of the spaced first material; after the laterally trimming, depositing a second alterable material over the spaced first features and the spaced first material and altering the second alterable material with material from the spaced first features and with material from the spaced first material to form second altered material on sidewalls of the spaced first features and on sidewalls of the spaced first material; and after forming the second altered material, removing the spaced first features and the spaced first material from the substrate. - View Dependent Claims (36)
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37. A method of forming a pattern on a substrate, comprising:
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forming spaced first features over a substrate; depositing a first alterable material over the spaced first features and altering only some of the first alterable material with material from the spaced first features to form first altered material on sidewalls of the spaced first features and leave first alterable material elevationally over and between the first altered material; after the altering of the first alterable material, removing only a portion of the first alterable material to expose the first altered material and form spaced first alterable material; after forming the spaced first alterable material, etching the first altered material from between the spaced first alterable material and the spaced first features; after the etching of the first altered material, laterally trimming width of the spaced first alterable material; after the laterally trimming, depositing a second alterable material over the spaced first features and the spaced first alterable material and altering the second alterable material with material from the spaced first features and with material from the spaced alterable material to form second altered material on sidewalls of the spaced first features and on sidewalls of the spaced alterable material; and after forming the second altered material, removing the spaced first features and the spaced first alterable material from the substrate.
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Specification