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High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability

  • US 8,703,605 B2
  • Filed: 07/07/2010
  • Issued: 04/22/2014
  • Est. Priority Date: 12/18/2007
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating an interconnect system, comprising:

  • a. depositing a dielectric layer over a substrate, said substrate having formed therein a conductor of a selected thickness;

    b. etching a preliminary contact opening in said dielectric layer over said conductor;

    c. depositing a sacrificial layer over the surface of a sidewall of said preliminary contact opening;

    d. with said sacrificial layer protecting said sidewall of said preliminary contact opening, forming a recess in said conductor at the bottom of said preliminary contact opening by performing an etch back process; and

    e. performing a residue removal process to remove at least a portion of said sacrificial layer and residue resulting from said etch back process to form a final contact opening.

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