Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers
First Claim
Patent Images
1. A method comprising:
- providing a semiconductor wafer having a ruthenium layer about 40 Angstroms thick or less on a surface of and on features in the semiconductor wafer;
depositing a copper seed layer on the ruthenium layer; and
annealing the copper seed layer in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed are methods of depositing and annealing a copper seed layer. A copper seed layer may be deposited on a ruthenium layer disposed on a surface of a wafer and on features in the wafer. The thickness of the ruthenium layer may be about 40 Angstroms or less. The copper seed layer may be annealed in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. Annealing the copper seed layer in a low-oxygen atmosphere may improve the properties of the copper seed layer.
-
Citations
24 Claims
-
1. A method comprising:
-
providing a semiconductor wafer having a ruthenium layer about 40 Angstroms thick or less on a surface of and on features in the semiconductor wafer; depositing a copper seed layer on the ruthenium layer; and annealing the copper seed layer in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method comprising:
-
providing a semiconductor wafer having a ruthenium layer about 40 Angstroms thick or less on a surface of and on features in the semiconductor wafer; depositing a copper alloy seed layer on the ruthenium layer; and annealing the copper alloy seed layer in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
-
-
22. A non-transitory computer machine-readable medium comprising program instructions for control of an apparatus, the instructions comprising code for:
-
providing a semiconductor wafer having a ruthenium layer about 40 Angstroms thick or less on a surface of and on features in the semiconductor wafer; depositing a copper seed layer on the ruthenium layer; and annealing the copper seed layer in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less.
-
-
23. A system comprising:
-
an electroplating apparatus; an annealing furnace; and one or more controllers including program instructions for conducting a process including; receiving a semiconductor wafer in the electroplating apparatus; depositing a copper seed layer on the wafer in the electroplating apparatus with an electroplating process, under conditions for depositing the copper seed layer on a ruthenium layer having a thickness of about 40 Angstroms or less on the semiconductor wafer surface and on features in the semiconductor wafer; and annealing the copper seed layer in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less in the annealing furnace. - View Dependent Claims (24)
-
Specification