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Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers

  • US 8,703,615 B1
  • Filed: 02/07/2012
  • Issued: 04/22/2014
  • Est. Priority Date: 03/06/2008
  • Status: Expired due to Fees
First Claim
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1. A method comprising:

  • providing a semiconductor wafer having a ruthenium layer about 40 Angstroms thick or less on a surface of and on features in the semiconductor wafer;

    depositing a copper seed layer on the ruthenium layer; and

    annealing the copper seed layer in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less.

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