Semiconductor device having an oxide semiconductor film

• US 8,704,218 B2
• Filed: 10/26/2010
• Issued: 04/22/2014
• Est. Priority Date: 10/30/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Tran, Thanh Y
• Application Number:
  US12/912,335
• Publication Number:
  US 20110101337A1
• Time in Patent Office: 1,274 Days
• Field of Search: 257/E29.068, 257/E29.079, 257/43, 257/288, 257/347, 257/368, 257/385, 257/392, 257/391, 257/500, 257/501, 257/640, 257/637, 257/350, 257/59, 257/72, 257/649, 257/635, 257/636, 257/756, 257/758, 257/E29.296, 257/E29.094, 257/E33.013, 257/76, 257/68, 257/296, 257/303, 257/301, 257/306, 257/60, 257/213, 438/151, 438/158, 438/149, 438/161, 438/153, 438/154, 438/104, 438/85, 438/86, 438/754, 438/48, 438/128, 438/157, 438/283, 438/46, 438/34, 438/22
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

To provide a thin film transistor which has high operation speed and in which a large amount of current can flow when the thin film transistor is on and off-state current at the time when the thin film transistor is off is extremely reduced. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen or an OH group contained in the oxide semiconductor is removed so that hydrogen is contained in the oxide semiconductor at a concentration of lower than or equal to 5×10¹⁹/cm³, preferably lower than or equal to 5×10¹⁸/cm³, more preferably lower than or equal to 5×10¹⁷/cm³, and the carrier concentration is lower than or equal to 5×10¹⁴/cm³, preferably lower than or equal to 5×10¹²/cm³.

Claims

1. A semiconductor device comprising:

a substrate;

a first insulating film on the substrate;

a first electrode on the first insulating film;

an oxide semiconductor film on the first electrode;

a second electrode on the oxide semiconductor film;

a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and

a third electrode adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween, the third electrode being in contact with the gate insulating film.

2. A semiconductor device according claim 1, further comprising a second insulating film provided over the third electrode.

3. A semiconductor device according claim 2, wherein the second insulating film comprises a stack of insulating layers.

4. A semiconductor device according claim 1, wherein the first insulating film comprises a stack of insulating layers.

5. A semiconductor device according claim 1, wherein the gate insulating film comprises a silicon nitride.

6. A semiconductor device according claim 1, wherein the first electrode functions as one of a source electrode and a drain electrode, wherein the second electrode functions as the other of the source electrode and the drain electrode, and wherein the third electrode functions as a gate electrode.

7. A semiconductor device according claim 1, wherein carrier concentration of the oxide semiconductor film is less than or equal to 5×

10¹⁴/cm³.

8. A semiconductor device according claim 1, wherein hydrogen concentration of the oxide semiconductor film is less than or equal to 5×

10¹⁹/cm³.

9. A semiconductor device according claim 1, wherein a channel region of the oxide semiconductor film comprises a crystal grain.

10. A semiconductor device according to claim 1, wherein the gate insulating film covers side surfaces of the oxide semiconductor film.

11. A semiconductor device comprising:

a substrate;

a first insulating film on the substrate;

a first electrode on the first insulating film;

an oxide semiconductor film on the first electrode;

a second electrode on the oxide semiconductor film;

a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and

a plurality of third electrodes adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween, the plurality of third electrodes being in contact with the gate insulating film.

12. A semiconductor device according claim 11, further comprising a second insulating film provided over the plurality of third electrodes.

13. A semiconductor device according claim 12, wherein the second insulating film comprises a stack of insulating layers.

14. A semiconductor device according claim 11, wherein the first insulating film comprises a stack of insulating layers.

15. A semiconductor device according claim 11, wherein the gate insulating film comprises a silicon nitride.

16. A semiconductor device according claim 11, wherein the first electrode functions as one of a source electrode and a drain electrode, wherein the second electrode functions as the other of the source electrode and the drain electrode, and wherein the plurality of third electrodes function as a gate electrode.

17. A semiconductor device according claim 11, wherein carrier concentration of the oxide semiconductor film is less than or equal to 5×

10¹⁴/cm³.

18. A semiconductor device according claim 11, wherein hydrogen concentration of the oxide semiconductor film is less than or equal to 5×

10¹⁹/cm³.

19. A semiconductor device according claim 11, wherein a channel region of the oxide semiconductor film comprises a crystal grain.

20. A semiconductor device comprising:

a substrate;

a first insulating film on the substrate;

a plurality of first electrodes on the first insulating film;

an oxide semiconductor film on the plurality of first electrodes;

a second electrode on the oxide semiconductor film;

a gate insulating film covering the plurality of first electrodes, the oxide semiconductor film, and the second electrode; and

a plurality of third electrodes adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween, the plurality of third electrodes being in contact with the gate insulating film.

21. A semiconductor device according claim 20, further comprising a second insulating film provided over the plurality of third electrodes.

22. A semiconductor device according claim 21, wherein the second insulating film comprises a stack of insulating layers.

23. A semiconductor device according claim 20, wherein the first insulating film comprises a stack of insulating layers.

24. A semiconductor device according claim 20, wherein the gate insulating film comprises a silicon nitride.

25. A semiconductor device according claim 20, wherein the plurality of first electrodes function as one of a source electrode and a drain electrode, wherein the second electrode functions as the other of the source electrode and the drain electrode, and wherein the plurality of third electrodes function as a gate electrode.

26. A semiconductor device according claim 20, wherein carrier concentration of the oxide semiconductor film is less than or equal to 5×

10¹⁴/cm³.

27. A semiconductor device according claim 20, wherein hydrogen concentration of the oxide semiconductor film is less than or equal to 5×

10¹⁹/cm³.

28. A semiconductor device according claim 20, wherein a channel region of the oxide semiconductor film comprises a crystal grain.