Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first transistor over a substrate, comprising;
a first oxide semiconductor layer over the substrate;
a first insulating film over the first oxide semiconductor layer; and
a first gate electrode over the first insulating film,a second transistor overlapping with the first transistor, comprising;
the first gate electrode;
a second insulating film over the first gate electrode; and
a second oxide semiconductor layer over the second insulating film,a first capacitor over the substrate, comprising;
a first conductive layer over the substrate;
the first insulating film over the first conductive layer; and
a second conductive layer over the first insulating film, anda second capacitor overlapping with the first capacitor, comprising;
the second conductive layer;
the second insulating film over the second conductive layer; and
a third conductive layer over the second oxide semiconductor layer.
1 Assignment
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Accused Products
Abstract
A semiconductor device with high productivity and high yield is provided. The semiconductor device includes a word line, a capacitor line, a first bit line, a second bit line, and a first transistor and a second transistor each of which includes a gate, a source, and a drain. The first transistor and the second transistor at least partly overlap with each other, and the gates of the first transistor and the second transistor are connected to the word line. A capacitor is formed between at least part of the capacitor line and each of the drains of the first transistor and the second transistor. The first bit line is connected to the source of the first transistor, and the second bit line is connected to the source of the second transistor.
122 Citations
19 Claims
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1. A semiconductor device comprising:
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a first transistor over a substrate, comprising; a first oxide semiconductor layer over the substrate; a first insulating film over the first oxide semiconductor layer; and a first gate electrode over the first insulating film, a second transistor overlapping with the first transistor, comprising; the first gate electrode; a second insulating film over the first gate electrode; and a second oxide semiconductor layer over the second insulating film, a first capacitor over the substrate, comprising; a first conductive layer over the substrate; the first insulating film over the first conductive layer; and a second conductive layer over the first insulating film, and a second capacitor overlapping with the first capacitor, comprising; the second conductive layer; the second insulating film over the second conductive layer; and a third conductive layer over the second oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a first transistor over a substrate, comprising; a first oxide semiconductor layer over the substrate; a first insulating film over the first oxide semiconductor layer; and a first gate electrode over the first insulating film, a second transistor overlapping with the first transistor, comprising; the first gate electrode; a second insulating film over the first gate electrode; and a second oxide semiconductor layer over the second insulating film, a first capacitor over the substrate, comprising; a first conductive layer over the substrate; the first insulating film over the first conductive layer; and a second conductive layer over the first insulating film, and a second capacitor overlapping with the first capacitor, comprising; the second conductive layer; the second insulating film over the second conductive layer; and a third conductive layer over the second oxide semiconductor layer, wherein the first conductive layer is in contact with the first oxide semiconductor layer and serves as one of a source and a drain of the first transistor, and wherein the third conductive layer is in contact with the second oxide semiconductor layer and serves as one of a source and a drain of the second transistor. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first transistor over a substrate, comprising; a first oxide semiconductor layer over the substrate; a first insulating film over the first oxide semiconductor layer; and a first gate electrode over the first insulating film, a second transistor overlapping with the first transistor, comprising; the first gate electrode; a second insulating film over the first gate electrode; and a second oxide semiconductor layer over the second insulating film, a third transistor over the substrate, comprising; a third oxide semiconductor layer over the substrate; the first insulating film over the third oxide semiconductor layer; and a second gate electrode over the first insulating film, and a fourth transistor overlapping with the third transistor, comprising; the second gate electrode; the second insulating film over the second gate electrode; and a fourth oxide semiconductor layer over the second insulating film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification