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Semiconductor device

  • US 8,704,221 B2
  • Filed: 12/17/2012
  • Issued: 04/22/2014
  • Est. Priority Date: 12/23/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor over a substrate, comprising;

    a first oxide semiconductor layer over the substrate;

    a first insulating film over the first oxide semiconductor layer; and

    a first gate electrode over the first insulating film,a second transistor overlapping with the first transistor, comprising;

    the first gate electrode;

    a second insulating film over the first gate electrode; and

    a second oxide semiconductor layer over the second insulating film,a first capacitor over the substrate, comprising;

    a first conductive layer over the substrate;

    the first insulating film over the first conductive layer; and

    a second conductive layer over the first insulating film, anda second capacitor overlapping with the first capacitor, comprising;

    the second conductive layer;

    the second insulating film over the second conductive layer; and

    a third conductive layer over the second oxide semiconductor layer.

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