Semiconductor device and method of manufacturing the same

• US 8,704,233 B2
• Filed: 03/14/2013
• Issued: 04/22/2014
• Est. Priority Date: 02/22/2000
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US13/829,922
• Publication Number:
  US 20130207116A1
• Time in Patent Office: 404 Days
• Field of Search: 257/59, 257/72, 257/88, 257/E33.062, 257/E33.053, 349/33
• US Class Current: 257/59
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133784 by rubbing
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 : with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 : integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1274 : using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 27/1288 : employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/42384 : for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/458 : for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 : for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 : Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78621 : with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 : with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/78645 : with multiple gate
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate

Abstract

The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.

Claims

1. A semiconductor device comprising:

a pixel portion over a substrate, the pixel portion comprising;

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising;

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring comprise a same material,

wherein the second wiring and the first conductive film comprises a same material,

wherein the third wiring and the second conductive film comprise a same material,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other, and

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate.

2. The semiconductor device according to claim 1,

wherein the third conductive film is electrically connected to the semiconductor layer.

3. The semiconductor device according to claim 1,

wherein the first electrode is over the semiconductor layer.

4. The semiconductor device according to claim 1, further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

5. An electronic appliance comprises the semiconductor device according to claim 1 and an operation switch.

6. A semiconductor device comprising:

a pixel portion over a substrate, the pixel portion comprising;

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising;

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring are formed by processing a same film,

wherein the second wiring and the first conductive film are formed by processing a same film,

wherein the third wiring and the second conductive film are formed by processing a same film,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other, and

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate.

7. The semiconductor device according to claim 6,

wherein the third conductive film is electrically connected to the semiconductor layer.

8. The semiconductor device according to claim 6,

wherein the first electrode is over the semiconductor layer.

9. The semiconductor device according to claim 6, further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

10. An electronic appliance comprises the semiconductor device according to claim 6 and an operation switch.

11. A display device comprising:

a pixel portion over a substrate, the pixel portion comprising;

a liquid crystal;

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising;

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring comprise a same material,

wherein the second wiring and the first conductive film comprises a same material,

wherein the third wiring and the second conductive film comprise a same material,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other,

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate, and

wherein the liquid crystal is controlled by the electric field.

12. The display device according to claim 11,

wherein the third conductive film is electrically connected to the semiconductor layer.

13. The display device according to claim 11,

wherein the first electrode is over the semiconductor layer.

14. The display device according to claim 11, further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

15. An electronic appliance comprises the display device according to claim 11 and an operation switch.

16. A display device comprising:

a pixel portion over a substrate, the pixel portion comprising;

a liquid crystal;

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising;

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring are formed by processing a same film,

wherein the second wiring and the first conductive film are formed by processing a same film,

wherein the third wiring and the second conductive film are formed by processing a same film,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other,

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate, and

wherein the liquid crystal is controlled by the electric field.

17. The display device according to claim 16,

wherein the third conductive film is electrically connected to the semiconductor layer.

18. The display device according to claim 16,

wherein the first electrode is over the semiconductor layer.

19. The display device according to claim 16, further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

20. An electronic appliance comprises the display device according to claim 16 and an operation switch.