Barrier structures and methods for through substrate vias
First Claim
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1. A semiconductor device comprising:
- an active device region disposed between isolation regions in a first substrate;
a through substrate via disposed within the first substrate, the through substrate via being disposed adjacent to the active device region;
a stress barrier layer encircling the through substrate via, wherein the stress barrier layer and the isolation regions extend into the first substrate a substantially same depth; and
a first portion of the first substrate separating the through substrate via from the stress barrier layer forming a buffer layer, the buffer layer surrounding the through substrate via.
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Abstract
Through substrate via barrier structures and methods are disclosed. In one embodiment, a semiconductor device includes a first substrate including an active device region disposed within isolation regions. A through substrate via is disposed adjacent to the active device region and within the first substrate. A buffer layer is disposed around at least a portion of the through substrate via, wherein the buffer layer is disposed between the isolation regions and the through substrate via.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an active device region disposed between isolation regions in a first substrate; a through substrate via disposed within the first substrate, the through substrate via being disposed adjacent to the active device region; a stress barrier layer encircling the through substrate via, wherein the stress barrier layer and the isolation regions extend into the first substrate a substantially same depth; and a first portion of the first substrate separating the through substrate via from the stress barrier layer forming a buffer layer, the buffer layer surrounding the through substrate via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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an active region disposed between isolation regions disposed within a first surface of a substrate; a transistor disposed in the active region; a through substrate via disposed within the substrate, the transistor being disposed adjacent the through substrate via; an insulating layer surrounding the through substrate via, wherein the insulating layer and the isolation regions have a substantially same depth; and a portion of the substrate extending to the first surface between the through substrate via and the insulating layer forming a buffer layer, the buffer layer encircling the through substrate via. - View Dependent Claims (12, 13, 14)
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15. A semiconductor device comprising:
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an active device region surrounded by isolation regions in a substrate; a through substrate via extending through the substrate, the through substrate via being disposed adjacent the active device region; a portion of the substrate encircling the through substrate via forming a buffer layer; and a stress alleviation layer encircling the buffer layer, the stress alleviation layer extending only into an upper portion of the substrate. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification