Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method

• US 8,705,007 B2
• Filed: 01/20/2010
• Issued: 04/22/2014
• Est. Priority Date: 02/11/2009
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Cramer, Hugo Augustinus Joseph, Kiers, Antoine Gaston Marie, Pellemans, Henricus Petrus Maria
• Primary Examiner(s): Ton, Toan
• Assistant Examiner(s): KREUTZER, COLIN WRIGHT
• Application Number:
  US12/690,221
• Publication Number:
  US 20100201963A1
• Time in Patent Office: 1,553 Days
• Field of Search: 25055904-55908, 25055929-5593, 250/559.44, 250/492.2, 355/53, 355/55, 355 67- 68, 355/71, 355/77, 356302-305, 356364-370, 356399-401, 356614-616, 356/624, 430/22, 430/30
• US Class Current: 355/68
• CPC Class Codes: G01J 3/18 using diffraction elements, e.g. grating gratings per se G02B
• CPC Class Codes: G01J 3/2803 using photoelectric array detector
• CPC Class Codes: G01J 3/4412 Scattering spectrometry particle sizing by light scattering G01N15/0205; optical velocimetry of particles G01P5/20, G01P5/26
• CPC Class Codes: G01N 21/4788 Diffraction for sizing particles G01N15/0205
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70191 Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 9/7049 Technique, e.g. interferometric
• CPC Class Codes: G03F 9/7065 Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
• CPC Class Codes: G03F 9/7092 Signal processing

Abstract

For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren'"'"'t illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.

Claims

1. An inspection apparatus configured to measure a property of a substrate, the apparatus comprising:

an illumination system configured to provide a beam of radiation;

a radiation projector configured to project the beam of radiation onto the substrate;

a numerical aperture lens;

a substrate comprising a mark with a line of symmetry that is parallel to and in alignment with a plane of symmetry of an illumination profile of the beam of radiation projected by the radiation projector,

wherein the illumination profile comprises two quadrants spaced apart from each other, the two quadrants being substantially illuminated; and

a detector configured to detect the radiation beam reflected from a surface of the substrate and separately detect a zeroth diffraction order and a higher diffraction order,

wherein the illumination profile is such that at least one characteristic of the mark is reconstructed using the separately detected zeroth diffraction order and the higher diffraction order.

2. The apparatus of claim 1, wherein the higher diffraction order is the first diffraction order.

3. The apparatus of claim 1, wherein an intensity distribution of the beam of radiation is not symmetric about an imaginary line in a pupil plane and passing through an optical axis of the radiation projector.

4. The apparatus of claim 1, wherein the illumination profile is such that over at least a part of the illumination profile, portions on a first side of the imaginary line which are illuminated have corresponding portions symmetrically opposite on the other side of the imaginary line which are not illuminated, and at least a part of the portions on the first side of the imaginary line which are not illuminated have corresponding portions symmetrically opposite on the other side of the imaginary line which are illuminated.

5. The apparatus of claim 1, wherein the illumination system configures the radiation beam to have the illumination profile.

6. The apparatus of claim 1, wherein the illumination profile comprises a second imaginary line perpendicular to a first imaginary line, and over at least a part of the illumination profile, portions on a first side of the second imaginary line which are illuminated have corresponding portions symmetrically opposite on the other side of the second imaginary line which are not illuminated, and at least a part of the portions on the first side of the second imaginary line which are not illuminated have corresponding portions symmetrically opposite on the other side of the second imaginary line which are illuminated.

7. The apparatus of claim 1, wherein the two quadrants are equal in size.

8. The apparatus of claim 1, wherein the illumination profile has further comprises two non-illuminated quadrants.

9. The apparatus of claim 1, wherein the mark on the substrate comprises at least two degrees of symmetry that are in parallel and in alignment with respective imaginary lines of the illumination profile.

10. The apparatus of claim 1, wherein the illumination system is configured to block portions of the radiation corresponding to the areas in the pupil plane in which the first diffraction orders are detected.

11. A lithographic apparatus comprising:

an illumination optical system arranged to illuminate a pattern;

a projection optical system arranged to project an image of the pattern on to a substrate; and

an inspection apparatus configured to measure a property of a substrate, the apparatus comprising;

an illumination system configured to provide a beam of radiation;

a radiation projector configured to project the beam of radiation onto the substrate;

a numerical aperture lens;

a substrate comprising a mark with a line of symmetry that is in parallel and in alignment with a plane of symmetry of an illumination profile of the beam of radiation projected by the radiation projector,

wherein the illumination profile comprises two quadrants positioned opposite to each other, the two quadrants being substantially illuminated; and

a detector configured to detect the radiation beam reflected from a surface of the substrate and separately detect a zeroth diffraction order and a higher diffraction order,

wherein the illumination profile is such that at least one characteristic of the mark is reconstructed using the separately detected zeroth diffraction order and the higher diffraction order.

12. A lithographic cell comprising:

a coater arranged to coat substrates with a radiation sensitive layer;

a lithographic apparatus arranged to expose images onto the radiation sensitive layer of substrates coated by the coater;

a developer arranged to develop images exposed by the lithographic apparatus; and

an inspection apparatus configured to measure a property of a substrate, the apparatus comprising;

an illumination system configured to provide a beam of radiation;

a radiation projector configured to project the beam of radiation onto the substrate;

a numerical aperture lens;

a substrate comprising a mark with a line of symmetry that is in parallel and in alignment with a plane of symmetry of an illumination profile of the beam of radiation projected by the radiation projector,

wherein the illumination profile comprises two quadrants spaced apart from each other, the two quadrants being substantially illuminated; and

a detector configured to detect the radiation beam reflected from a surface of the substrate and separately detect a zeroth diffraction order and a higher diffraction order,

wherein the illumination profile is such that at least one characteristic of the mark is reconstructed using the separately detected zeroth diffraction order and the higher diffraction order.

13. A method of measuring a property of a substrate, the method comprising:

projecting a beam of radiation onto a target exposed on the substrate;

aligning a line of symmetry of a mark on the substrate in parallel with a plane of symmetry of an illumination profile of the projected beam of radiation;

detecting the radiation reflected by the substrate; and

determining the property from the reflecting radiation,

wherein;

the illumination profile comprises two quadrants spaced apart from each other, the two quadrants being substantially illuminated; and

the illumination profile of the beam of radiation projected by a radiation projector is such that an intensity distribution of the beam of radiation is not symmetric about an imaginary line in a pupil plane and passing through an optical axis of the radiation projector.

14. An inspection apparatus configured to measure a property of a substrate, the apparatus comprising:

an illumination system configured to provide a beam of radiation;

a radiation projector configured to project the radiation beam onto the substrate;

a numerical aperture lens;

a substrate comprising a mark with a line of symmetry that is in parallel and in alignment with a plane of symmetry of an illumination profile of the beam of radiation projected by the radiation projector,

wherein the illumination profile comprises two quadrants spaced apart from each other, the two quadrants being substantially illuminated; and

a detector configured to detect the radiation beam reflected from a surface of the substrate and to separately detect a zeroth and a first diffraction orders,

wherein the illumination profile of the radiation beam projected by the radiation projector is such that an intensity distribution of the radiation beam is not symmetric about the an imaginary line in a pupil plane and passing through an optical axis of the radiation projector.

15. The apparatus according to claim 14, wherein the illumination profile is such that, over at least a part of the illumination profile, portions on a first side of the imaginary line that are illuminated have corresponding portions symmetrically opposite on the other side of the imaginary line that are not illuminated, and portions on the first side of the imaginary line that are not illuminated have corresponding portions symmetrically opposite on the other side of the imaginary line that are illuminated.

16. The apparatus according to claim 14, wherein the illumination system configures the radiation beam to have the illumination profile.

17. The apparatus according to claim 14, wherein the illumination profile as comprises a second imaginary line perpendicular to a first imaginary line, and wherein over at least a part of the illumination profile, portions on a first side of the second imaginary line that are illuminated have corresponding portions symmetrically opposite on the other side of the second imaginary line that are not illuminated, and portions on the first side of the second imaginary line that are not illuminated have corresponding portions symmetrically opposite on the other side of the second imaginary line that are illuminated.

18. The apparatus according to claim 14, wherein the two quadrants are equal in size.

19. The apparatus according to claim 14, wherein the two quadrants are positioned opposite to each other.

20. The apparatus of claim 14, wherein the illumination profile further comprises two non-illuminated quadrants.

21. The apparatus according to claim 20, wherein the two non-illuminated quadrants are equal in size.

22. The apparatus of claim 17, wherein the mark on the substrate comprises at least two degrees of symmetry that are in parallel and in alignment with respective imaginary lines of the illumination profile.

23. The apparatus of claim 14, wherein the illumination system is configured to block portions of the radiation beam corresponding to areas in the pupil plane in which the first diffraction orders are detected.

24. A lithographic apparatus comprising:

an illumination optical system arranged to illuminate a pattern;

a projection optical system arranged to project an image of the pattern on to a substrate; and

an inspection apparatus comprising;

a substrate comprising a mark with a line of symmetry that is in parallel and in alignment with a plane of symmetry of an illumination profile of a beam of radiation projected by a radiation projector,

wherein the illumination profile comprises two quadrants positioned opposite to each other, the two quadrants being substantially illuminated; and

a detector configured to detect the radiation beam reflected from a surface of the substrate and to separately detect a zeroth and a first diffraction orders,

wherein the illumination profile of the reflected radiation beam is such that an intensity distribution thereof is not symmetric about an imaginary line in a pupil plane and passing through an optical axis of the projection optical system.

25. A lithographic cell comprising:

a coater arranged to coat substrates with a radiation sensitive layer;

a lithographic apparatus arranged to expose images onto the radiation sensitive layer of substrates coated by the coater;

a developer arranged to develop images exposed by the lithographic apparatus; and

an inspection apparatus comprising;

a substrate comprising a mark with a line of symmetry that is in parallel and in alignment with a plane of symmetry of an illumination profile of a beam of radiation projected by a radiation projector,

wherein the illumination profile comprises two quadrants spaced apart from each other, the two quadrants being substantially illuminated; and

a detector configured to detect the radiation beam reflected from a surface of the substrate and to separately detect a zeroth and a first diffraction orders,

wherein the illumination profile of the reflected radiation beam is such that an intensity distribution thereof is not symmetric about an imaginary line in a pupil plane and passing through an optical axis of the projection optical system.

26. A method of measuring a property of a substrate, the method comprising:

projecting, with a projection optical system, a beam of radiation onto a target exposed onto the substrate;

aligning a line of symmetry of a mark on the substrate in parallel with a plane of symmetry of an illumination profile of the projected beam of radiation,

wherein the illumination profile comprises two quadrants spaced apart from each other, the two quadrants being substantially illuminated;

detecting radiation reflected by the substrate and separately detecting a zeroth diffraction order and a higher diffraction order; and

reconstructing at least one characteristic of the mark using the separately detected zeroth diffraction order and the higher diffraction order.

27. The method according to claim 26, wherein an intensity distribution of the beam of radiation is not symmetric about an imaginary line in a pupil plane and passing through an optical axis of the projection optical system.