Method for manufacturing light emitting diodes

• US 8,709,835 B2
• Filed: 06/12/2006
• Issued: 04/29/2014
• Est. Priority Date: 06/16/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Leem, See jong
• Primary Examiner(s): Lee, Jae
• Application Number:
  US11/450,343
• Publication Number:
  US 20060286697A1
• Time in Patent Office: 2,878 Days
• Field of Search: 438 22- 47
• US Class Current: 438/22
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A method for manufacturing the LEDs is disclosed, whereby the light extraction efficiency of the device can be enhanced by forming patterns on a top surface of a substrate, a light emitting structure is formed on the top surface of the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on top surface of the substrate are formed on the surface of the light emitting structure.

Claims

1. A method for manufacturing light emitting diodes comprising:

forming a semiconductor structure on a substrate, the semiconductor structure comprising a first layer having a first polarity, an active layer, and a second layer having an opposite polarity to that of the first layer, wherein a surface of the substrate has patterns, the surface contacts the semiconductor structure;

forming a first electrode on the semiconductor structure, the first electrode comprising a contact of the second polarity to the second layer;

forming a UBM (Under Bump Metallization) layer on the first electrode, the UBM layer having at least two metal layers, wherein the UBM layer comprises a laminated structure of Ti/Pt/Au, Ti/Au or Pt/Au;

bonding a support on the UMB layer using a bonding material such that the bonding material forms a bonding layer between the UBM layer and the support;

performing a lift-off process such that the substrate is separated from the first layer; and

forming a second electrode on the first layer,

wherein the UBM layer is located between the first electrode and the bonding layer, and wherein the first electrode is located between the semiconductor structure and the UBM layer,

wherein while forming the semiconductor structure on the substrate, patterns are formed on a surface of the first layer along patterns which are a part of the substrate and comprised of the same material as the substrate, and

wherein the second electrode contacts the patterns on the surface of the first layer and an air gap is disposed between the second electrode and the patterns on the surface of the first layer.

2. The method as defined in claim 1, wherein the support comprises:

a conductive substrate; and

an ohmic contact located on at least one surface of the conductive substrate.

3. The method as defined in claim 1, further comprising forming a reflection layer between the first electrode and the UBM layer.

4. The method as defined in claim 3, wherein the reflection layer comprises at least one or a combination of Ag, Al, Pt, Au, Ni, Ti, and a transmissive conductive oxide layer.

8. The method as defined in claim 1, wherein the substrate comprises any one of a sapphire substrate, a silicon substrate, a zinc oxide substrate and a nitride semiconductor substrate.

9. The method as defined in claim 2, wherein the conductive substrate comprises one or more of Si, AlN, SiC, GaAs, Cu, W, and Mo.

15. The method as defined in claim 1, wherein the substrate comprises a template substrate laminated with any one of GaN, InGaN, AlGaN and AlInGaN on any one of a sapphire substrate, a silicon substrate and a zinc oxide substrate, or a dielectric layer on any one of GaN, InGaN, AlGaN and AlInGaN on any one of a sapphire substrate, a silicon substrate and a zinc oxide substrate.

16. The method as defined in claim 1, wherein the first layer is an n-GaN layer, and the second layer is a p-GaN layer.

17. The method as defined in claim 1, wherein the UBM layer contacts the bonding layer.

18. The method as defined in claim 3, wherein the UBM layer contacts the reflection layer.

23. The method as defined in claim 1, wherein the contact of the second polarity comprises an ohmic contact to the second layer.

25. The method as defined in claim 1, wherein the UBM layer further comprises at least one of Ni and Au.

26. The method as defined in claim 1, wherein the bonding layer is configured to enhance adhesion between the UBM layer and the sub-mount.

27. The method as defined in claim 1, wherein the bonding layer comprises solder.

5. A method for manufacturing light emitting diodes comprising:

forming a metal film layer on a sapphire substrate;

heat-treating the metal film layer to form a plurality of nano agglomerations;

etching the sapphire substrate using the nano agglomerations as a mask to form a plurality of nano rods which are a part of the sapphire substrate and comprised of the same material as the sapphire substrate;

removing the nano agglomerations;

forming a semiconductor structure on a surface of the sapphire substrate where the nano rods are formed, the semiconductor structure comprising a first layer having a first polarity, an active layer, and a second layer having an opposite polarity to that of the first layer;

forming a first electrode on the semiconductor structure;

forming a conductive holder on the first electrode;

performing a lift-off process such that the sapphire substrate is separated from the first layer, to form on the first layer patterns corresponding to the nano rods formed on the sapphire substrate; and

forming a second electrode on the first layer,

wherein while forming the semiconductor structure on the surface of the sapphire substrate, patterns are formed on a surface of the first layer along with the plurality of nano rods of the sapphire substrate,

wherein the patterns form a light extraction structure,

wherein the second electrode contacts the light extraction structure and an air gap is disposed between the second electrode and the light extraction structure.

6. The method as defined in claim 5, further comprising forming a reflection layer between the first electrode and the conductive holder.

7. The method as defined in claim 5, wherein the first layer is an n-GaN layer, and the second layer is a p-GaN layer.

10. The method as defined in claim 5, wherein the conductive holder is formed by any one or more methods of electro-plating, electroless plating, a CVD and sputtering.

11. The method as defined in claim 5, wherein a thickness of the conductive holder is in the range of 10˜

400 μ

m.

12. The method as defined in claim 5, wherein the material of the conductive holder comprises at least one or more of Cu, W, Au, Ni, Mo, Pt, Pd, Co, Ag, Al and Ti.

19. The method as defined in claim 5, wherein the light extraction structure is configured to enhance the light extraction effifiency of the diode.

20. The method as defined in claim 5, wherein the nano agglomerations have a discrete distribution.

13. A method for manufacturing light emitting diodes comprising:

forming a semiconductor structure on a substrate, the semiconductor structure comprising an n-GaN layer, an active layer, and a p-GaN layer, wherein a surface of the substrate has patterns, the surface contacts the semiconductor structure;

forming a first electrode on the semiconductor structure, the first electrode comprising a p-contact to the p-GaN layer;

forming a reflection layer on the first electrode;

forming a UBM (Under Bump Metallization) layer on the reflective layer, the UBM layer having at least two metal layers, wherein the UBM layer comprises at least one of Ti or Pt;

bonding a sub-mount substrate on the UBM layer using a bonding material such that the bonding material forms a bonding layer between the UBM layer and the support;

performing a lift-off process such that the substrate is separated from the N-GaN layer; and

forming a second electrode on the n-GaN layer,

wherein the UBM layer is located between the reflection layer and the bonding layer, and wherein the reflection layer is located between the semiconductor structure and the UBM layer,

wherein while forming the semiconductor structure on the substrate, patterns are formed on a surface of the n-GaN layer along with patterns which are a part of the substrate and comprised of the same materials as the substrate, and

wherein the second electrode contact the patterns on the surface of the n-GaN layer and an air gap is disposed between the second electrode and the patterns on the surface of the n-GaN layer.

14. The method as defined in claim 13, wherein the reflection layer comprises one or a combination of Ag, Al, Pt, Au, Ni, Ti, and a transmissive conductive oxide.

21. The method as defined in claim 13, wherein the UBM layer contacts the bonding layer.

22. The method as defined in claim 13, wherein the UBM layer contacts the reflection layer.

24. The method as defined in claim 13, wherein the p-contact comprises a p-ohmic contact to the p-GaN layer.

28. The method as defined in claim 13, wherein the UBM layer further comprises at least one of Ni and Au.

29. The method as defined in claim 13, wherein the bonding layer is configured to enhance adhesion between the UBM layer and the sub-mount.

30. The method as defined in claim 13, wherein the bonding layer comprises solder.