Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
First Claim
1. A method for manufacturing an oxide semiconductor element, comprising the step of:
- forming an oxide semiconductor layer over a substrate by using a sputtering target in a chamber,wherein a filling rate of the sputtering target is greater than or equal to 90%, andwherein the sputtering target is heated by a heater in the chamber before the step of forming the oxide semiconductor layer so that hydrogen and carbon contained in the sputtering target are removed.
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Abstract
An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.
112 Citations
14 Claims
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1. A method for manufacturing an oxide semiconductor element, comprising the step of:
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forming an oxide semiconductor layer over a substrate by using a sputtering target in a chamber, wherein a filling rate of the sputtering target is greater than or equal to 90%, and wherein the sputtering target is heated by a heater in the chamber before the step of forming the oxide semiconductor layer so that hydrogen and carbon contained in the sputtering target are removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing an oxide semiconductor element, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor layer over the gate electrode with the gate insulating film therebetween; forming a source electrode and a drain electrode in contact with the oxide semiconductor layer so that end portions of the source electrode and the drain electrode overlap with the gate electrode; and forming an oxide insulating film covering the oxide semiconductor layer between the source electrode and the drain electrode, wherein the substrate is held in a chamber kept in a reduced pressure state, wherein moisture remaining in the chamber is removed and a sputtering gas from which hydrogen and moisture are removed is introduced, and wherein the oxide semiconductor layer is formed by using a sputtering target in the chamber, wherein a filling rate of the sputtering target is greater than or equal to 90%, and wherein the sputtering target is heated by a heater in the chamber before the step of forming the oxide semiconductor layer so that hydrogen and carbon contained in the sputtering target are removed. - View Dependent Claims (11, 12, 13, 14)
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Specification