Methods of forming integrated circuit packages

• US 8,709,866 B2
• Filed: 08/09/2013
• Issued: 04/29/2014
• Est. Priority Date: 05/17/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Fee, Setho Sing, Chye, Lim Thiam, Jiang, Tongbi
• Primary Examiner(s): Ahmadi, Mohsen
• Application Number:
  US13/963,866
• Publication Number:
  US 20130330882A1
• Time in Patent Office: 263 Days
• Field of Search: 438106-108, 438118-120, 438/122, 438/584, 438612-614, 438/694, 257/E21.508, 257/E21.509
• US Class Current: 438/106
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/81193 wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/81894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Claims

1. A method of forming an integrated circuit package, comprising:

forming adhesion layers over bond pad regions of a semiconductor die;

forming electrically conductive inner layers over the adhesion layers, the electrically conductive inner layers comprising one or more of B, Co, Cr, Ni, P, Pt, Ta, Ti, V and W;

forming electrically conductive outer layers over the inner layers;

directly contacting the electrically conductive outer layers with electrically conductive balls;

providing z-axis conductive material over and between the balls, the z-axis conductive material entirely surrounding exposed surfaces of the balls;

utilizing electrically conductive surfaces of a piece to press the z-axis conductive material until the surfaces penetrate through the z-axis material to directly contact the balls;

the z-axis conductive material being in a non-conductive form as the z-axis conductive material is formed over and between the balls;

some of the z-axis conductive material being compressed when the z-axis conductive material is pressed with the electrically conductive surfaces and being transformed to a conductive form;

the conductive form of the z-axis conductive material being directly adjacent the balls; and

utilizing vibrational energy with a frequency of at least about one kilohertz to bond the electrically conductive outer layers to the electrically conductive balls; and

utilizing vibrational energy with a frequency of at least about one kilohertz to bond the electrically conductive surfaces to the electrically conductive balls.

2. The method of claim 1 wherein the balls comprise copper.

3. The method of claim 1 wherein the balls comprise gold.

4. The method of claim 1 wherein the electrically conductive outer layers comprise one or more of Ag, Au, Cu and Pd.

5. The method of claim 4 wherein the electrically conductive surfaces comprise one or more of Ag, Au, Cu and Pd.

6. The method of claim 4 wherein the adhesion layers are palladium-containing layers.

7. The method of claim 4 wherein the adhesion layers are zinc-containing layers.

8. The method of claim 7 wherein the forming of the zinc-containing layers comprises:

first zincate activation of surfaces of the bond pad regions to form a first zinc-containing material;

removal of the first zinc-containing material; and

second zincate activation of surfaces of the bond pad regions to form a second zinc-containing material.

9. The method of claim 7 wherein the bond pad regions comprise aluminum or copper, and wherein the zinc-containing layers are formed directly against the aluminum or copper of the bond pad regions.