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Method for manufacturing semiconductor device

  • US 8,709,920 B2
  • Filed: 02/16/2012
  • Issued: 04/29/2014
  • Est. Priority Date: 02/24/2011
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode;

    forming a gate insulating film over the gate electrode;

    forming a semiconductor film which is over the gate insulating film; and

    forming a pair of electrodes over the gate insulating film so that the pair of electrodes does not overlap with the gate electrode and is in contact with the semiconductor film,wherein a thickness of the gate electrode is selected so that a channel length is three times or more as long as an apparent channel length which is a distance between the pair of electrodes when seen from above.

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