Semiconductor device

• US 8,709,922 B2
• Filed: 04/17/2012
• Issued: 04/29/2014
• Est. Priority Date: 05/06/2011
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Yamade, Naoto, Sato, Yuhei, Terashima, Mari, Yoshioka, Kyoko
• Primary Examiner(s): Slutsker, Julia
• Assistant Examiner(s): GONDARENKO, NATALIA A
• Application Number:
  US13/448,611
• Publication Number:
  US 20120280234A1
• Time in Patent Office: 742 Days
• Field of Search: 257/43, 257/57, 438/285, 438/158, 438/483, 438/479, 438/471, 438/480, 438/482, 438/473, 438505-510
• US Class Current: 438/482
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

Claims

1. A method for manufacturing a transistor, the method comprising the steps of:

forming an amorphous oxide semiconductor layer;

heating the amorphous oxide semiconductor layer to form a crystalline region in the amorphous oxide semiconductor layer;

forming a gate insulating layer over and in contact with the heated amorphous oxide semiconductor layer;

implanting oxygen to the amorphous oxide semiconductor layer so that the amorphous oxide semiconductor layer comprises a region having stoichiometrically excessive oxygen and the crystalline region is transformed to an amorphous structure;

forming a gate electrode over the gate insulating layer; and

forming an insulating layer over the gate electrode, the insulating layer comprising aluminum oxide.

2. The method according to claim 1, wherein the implantation of oxygen is performed before forming the gate insulating layer.

3. The method according to claim 1, wherein the gate insulating layer comprises a region having stoichiometrically excessive oxygen.

4. The method according to claim 1, further comprising a heating step of the amorphous oxide semiconductor layer after forming the insulating layer so as to maintain the amorphous structure.

5. The method according to claim 1,

wherein the insulating layer comprises a first layer and a second layer over the first layer,

wherein the second layer comprises aluminum oxide, and

wherein the first layer comprises a metal oxide other than aluminum oxide.

6. The method according to claim 5, wherein the first layer comprises a region having stoichiometrically excessive oxygen.

7. A method for manufacturing a transistor, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming an amorphous oxide semiconductor layer over the gate insulating layer;

heating the amorphous oxide semiconductor layer to form a crystalline region in the amorphous oxide semiconductor layer;

implanting oxygen to the heated amorphous oxide semiconductor layer so that the amorphous oxide semiconductor layer comprises a region having stoichiometrically excessive oxygen and the crystalline region is transformed to an amorphous structure; and

forming an insulating layer over the amorphous oxide semiconductor layer, the insulating layer comprising aluminum oxide.

8. The method according to claim 7, wherein the implantation of oxygen is performed after forming the insulating layer.

9. The method according to claim 7, wherein the gate insulating layer comprises a region having stoichiometrically excessive oxygen.

10. The method according to claim 7,

wherein the insulating layer comprises a first layer and a second layer over the first layer,

wherein the second layer comprises aluminum oxide, and

wherein the first layer comprises a metal oxide other than aluminum oxide.

11. The method according to claim 10, wherein the first layer comprises a region having stoichiometrically excessive oxygen.