Array substrate including thin film transistor and method of fabricating the same
First Claim
1. An array substrate, comprising:
- a substrate;
a gate electrode on the substrate;
a gate insulating layer on the gate electrode, the gate insulating layer including a first insulator and a second insulator on the first insulator, wherein the first insulator includes an aluminum oxide material and has a first thickness, and the second insulator includes a hafnium oxide material and has a second thickness;
an oxide semiconductor layer on the gate insulating layer over the gate electrode;
a source electrode and a drain electrode contacting the oxide semiconductor layer, the source electrode and the drain electrode spaced apart from each other;
a passivation layer on the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and
a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole,wherein the aluminum oxide material includes a phosphate (PO43−
) to be expressed as Al2(PO4)2-xO3x/2(0≦
x≦
1.5).
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Accused Products
Abstract
An array substrate includes: a substrate; a gate line and a gate electrode on the substrate; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including a first insulator and a second insulator on the first insulator, wherein the first insulator includes an aluminum oxide material and has a first thickness, and the second insulator includes a hafnium oxide material and has a second thickness; an oxide semiconductor layer on the gate insulating layer over the gate electrode; a data line over the gate insulating layer; a source electrode and a drain electrode contacting the oxide semiconductor layer; a passivation layer on the data line, the source electrode and the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to a drain electrode through a drain contact hole.
12 Citations
22 Claims
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1. An array substrate, comprising:
-
a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode, the gate insulating layer including a first insulator and a second insulator on the first insulator, wherein the first insulator includes an aluminum oxide material and has a first thickness, and the second insulator includes a hafnium oxide material and has a second thickness; an oxide semiconductor layer on the gate insulating layer over the gate electrode; a source electrode and a drain electrode contacting the oxide semiconductor layer, the source electrode and the drain electrode spaced apart from each other; a passivation layer on the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole, wherein the aluminum oxide material includes a phosphate (PO43−
) to be expressed as Al2(PO4)2-xO3x/2(0≦
x≦
1.5). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating an array substrate, comprising:
-
forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode, the gate insulating layer including a first insulator and a second insulator on the first insulator, wherein the first insulator includes an aluminum oxide material and has a first thickness, and the second insulator includes a hafnium oxide material and has a second thickness; forming an oxide semiconductor layer on the gate insulating layer over the gate electrode; forming a source electrode and a drain electrode over the gate insulating layer, the source electrode and the drain electrode contacting the oxide semiconductor layer and spaced apart from each other; forming a passivation layer on the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole, wherein the aluminum oxide material includes a phosphate (PO43−
) to be expressed as Al2(PO4)2-xO3x/2(0≦
x≦
1.5). - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification