Transistor and display device
First Claim
1. A transistor comprising:
- a gate electrode layer;
an oxide semiconductor layer adjacent to the gate electrode layer with a gate insulating layer therebetween;
a source electrode layer adjacent to the oxide semiconductor layer with an oxide conductive layer therebetween; and
a drain electrode layer adjacent to the oxide semiconductor layer with the oxide conductive layer therebetween,wherein the oxide conductive layer includes a microcrystalline region, andwherein a peak of a desorption constituent, which is derived from moisture, is not shown in a spectrum of the oxide semiconductor layer, which is shown with thermal desorption spectroscopy in a temperature range of greater than or equal to 200°
C. and less than or equal to 350°
C.
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Accused Products
Abstract
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
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Citations
18 Claims
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1. A transistor comprising:
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a gate electrode layer; an oxide semiconductor layer adjacent to the gate electrode layer with a gate insulating layer therebetween; a source electrode layer adjacent to the oxide semiconductor layer with an oxide conductive layer therebetween; and a drain electrode layer adjacent to the oxide semiconductor layer with the oxide conductive layer therebetween, wherein the oxide conductive layer includes a microcrystalline region, and wherein a peak of a desorption constituent, which is derived from moisture, is not shown in a spectrum of the oxide semiconductor layer, which is shown with thermal desorption spectroscopy in a temperature range of greater than or equal to 200°
C. and less than or equal to 350°
C. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A transistor comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; an oxide conductive layer over the oxide semiconductor layer; a source electrode layer over the oxide conductive layer; and a drain electrode layer over the oxide conductive layer; wherein the oxide conductive layer includes a microcrystalline region, and wherein a peak of a desorption constituent, which is derived from moisture, is not shown in a spectrum of the oxide semiconductor layer, which is shown with thermal desorption spectroscopy in a temperature range of greater than or equal to 200°
C. and less than or equal to 350°
C. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A display device comprising:
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a pixel portion over a substrate; and a driver circuit over the substrate and comprising a transistor; the transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; an oxide conductive layer over the oxide semiconductor layer; a source electrode layer over the oxide conductive layer; and a drain electrode layer over the oxide conductive layer; wherein the oxide conductive layer includes a microcrystalline region, and wherein a peak of a desorption constituent, which is derived from moisture, is not shown in a spectrum of the oxide semiconductor layer, which is shown with thermal desorption spectroscopy in a temperature range of greater than or equal to 200°
C. and less than or equal to 350°
C. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification