Light-emitting diode devices

• US 8,710,531 B2
• Filed: 08/31/2012
• Issued: 04/29/2014
• Est. Priority Date: 09/02/2011
• Status: Expired due to Fees

• Current Assignee: Syue-Min Li
• Original Assignee: Syue-Min Li
• Inventors: Li, Syue-Min
• Primary Examiner(s): Dickey, Thomas L
• Assistant Examiner(s): Schoenholtz, Joseph
• Application Number:
  US13/600,440
• Publication Number:
  US 20130056779A1
• Time in Patent Office: 606 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/0004 Devices characterised by their operation
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED device includes a die carrier having a die mounting surface and electrical connection regions. An LED die is mounted on the die mounting surface of the die carrier. The LED die includes a substrate, a first type semiconductor layer disposed atop the substrate, a second type semiconductor layer disposed atop the first type semiconductor layer, an another first type semiconductor layer disposed atop the second type semiconductor layer, at least three through holes each extending from the substrate to a corresponding semiconductor layer, an insulative layer formed on inner walls of the through holes, and electrically conductive linkers mounted within the through holes. Each electrically conductive linker has an end electrically connected to a corresponding semiconductor layer and an opposite end protruding outwardly from the corresponding through hole for electrical connection to a corresponding electrical connection region. A light transmissible protective layer covers the LED die.

Claims

1. A light-emitting diode device, comprising:

a die carrier having a die mounting surface and a plurality of electrical connection regions electrically insulated from one another;

a light-emitting diode (LED) die mounted on the die mounting surface of the die carrier, wherein the LED die comprises a substrate, a first type semiconductor layer disposed atop the substrate, a second type semiconductor layer disposed atop the first type semiconductor layer, an another first type semiconductor layer disposed atop the second type semiconductor layer, at least three through holes each extending through the substrate to a corresponding one of the semiconductor layers, an insulative layer formed on inner walls of the through holes, and electrically conductive linkers mounted within the respective through holes, and

wherein each of the electrically conductive linkers has an end electrically connected to a corresponding one of the semiconductor layers and an opposite end protruding outwardly from the corresponding through hole and adapted for electrical connection to a corresponding one of the electrical connection regions of the die carrier; and

a light transmissible protective layer formed on the die mounting surface of the die carrier in a manner covering the LED die.

2. The LED device according to claim 1,

wherein the light transmissible protective layer is doped with phosphor powder.

3. The LED device according to claim 1,

wherein the first type semiconductor layers are p-type semiconductor layers, whereas the second type semiconductor layer is an n-type semiconductor layer.

4. The LED device according to claim 1,

wherein the first type semiconductor layers are n-type semiconductor layers, whereas the second type semiconductor layer is a p-type semiconductor layer.

5. The LED device according to claim 1,

wherein the electrically conductive linkers are made of indium tin oxide (ITO).

6. The LED device according to claim 1,

wherein the electrically conductive linkers are made of any electrically conductive metallic material.

7. The LED device according to claim 1,

wherein the substrate is a sapphire substrate or a silicon substrate.

8. A light-emitting diode device, comprising:

a die carrier having a die mounting surface and a plurality of electrical connection regions electrically insulated from one another;

a light-emitting diode (LED) die mounted on the die mounting surface of the die carrier, wherein the LED die comprises a substrate, a first type semiconductor layer disposed under the substrate and provided with a conductive island, a second type semiconductor layer disposed under the first type semiconductor layer without shielding the conductive island of the first type semiconductor layer and provided with a conductive island, and an another first type semiconductor layer disposed under the second type semiconductor layer without shielding the conductive island of the second type semiconductor layer and provided with a conductive island;

a reflective layer disposed under the semiconductor layers and formed with a plurality of through holes to expose the conductive islands;

an insulative layer disposed under the reflective layer and formed with a plurality of via holes registered with the corresponding through holes;

a plurality of electrically conductive linkers, each extending from a corresponding one of the conductive islands along a corresponding one of the through holes and the via hole registered with the corresponding through hole and protruding outwardly from the insulative layer for electrical connection to a corresponding one of the electrical connection regions of the die carrier; and

a light transmissible protective layer formed on the die mounting surface of the die carrier in a manner covering the LED die.

9. The LED device according to claim 8,

wherein the light transmissible protective layer is doped with phosphor powder.

10. The LED device according to claim 8,

wherein the first type semiconductor layers are p-type semiconductor layers, whereas the second type semiconductor layer is an n-type semiconductor layer.

11. The LED device according to claim 8,

wherein the first type semiconductor layers are n-type semiconductor layers, whereas the second type semiconductor layer is a p-type semiconductor layer.

12. The LED device according to claim 8,

wherein the electrically conductive linkers are made of indium tin oxide (ITO).

13. The LED device according to claim 8,

wherein the electrically conductive linkers are made of any electrically conductive metallic material.

14. The LED device according to claim 8,

wherein the substrate is a sapphire substrate or a silicon substrate.

15. A light-emitting diode device, comprising:

a the die carrier comprising a first surface, a second surface opposite to the first surface, a plurality of vias connecting the first surface to the second surface, and a plurality of anchor seats formed on the second surface of the die carrier along peripheries of the respective vias;

a light-emitting diode (LED) die comprising a substrate, a first type semiconductor layer disposed under the substrate and provided with a conductive island at a predetermined position, a second type semiconductor layer disposed under the first type semiconductor layer without shielding the conductive island of the first type semiconductor layer and provided with a conductive island at a predetermined position;

a reflective layer disposed under surfaces of the semiconductor layers and formed with a plurality of through holes to expose the conductive islands;

an adhesive insulative layer disposed on the reflective layer and formed with a plurality of via holes registered with the corresponding through holes;

a plurality of electrically conductive linkers, each extending from a corresponding one of the conductive islands to a corresponding one of the anchor seats along a corresponding one of the through holes, a corresponding one of the via holes and a corresponding one of the vias; and

a light transmissible protective layer formed on the first surface of the die carrier in a manner covering the LED die.

16. The LED device according to claim 15,

further comprising an additional first type semiconductor layer disposed atop the second type semiconductor layer without shielding the conductive island of the second type semiconductor layer and provided with a conductive island at a predetermined position.

17. The LED device according to claim 15,

wherein the light transmissible protective layer is doped with phosphor powder.

18. The LED device according to claim 16,

wherein the first type semiconductor layers are p-type semiconductor layers, whereas the second type semiconductor layer is an n-type semiconductor layer.

19. The LED device according to claim 16,

wherein the first type semiconductor layers are n-type semiconductor layers, whereas the second type semiconductor layer is a p-type semiconductor layer.

20. The LED device according to claim 15,

wherein the electrically conductive linkers are made of indium tin oxide (ITO).

21. The LED device according to claim 15,

wherein the electrically conductive linkers are made of any electrically conductive metallic material.

22. The LED device according to claim 15,

wherein the substrate is a sapphire substrate or a silicon substrate.