High voltage fast recovery trench diode
First Claim
1. A trench diode comprising:
- an epitaxial layer of a first conductivity type;
a barrier layer of the first conductivity type formed above the top surface of the epitaxial layer;
a top-layer of a second conductivity type formed above the top surface of the barrier layer;
one or more trenches formed through the top-layer and the barrier layer, wherein the a conductive material is disposed in the trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches;
a contact pocket formed in an upper portion of the top-layer, wherein the contact pocket is of the second conductivity type, and wherein a doping concentration of the contact pocket is greater than a doping concentration of the top-layer;
an electrically floating pocket formed underneath the contact pocket, wherein the floating pocket is of the first conductivity type; and
an electrode configured to contact the contact pocket, the top-layer, and the conductive material.
1 Assignment
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Accused Products
Abstract
Aspects of the present disclosure describe high voltage fast recovery trench diodes and methods for make the same. The device may have trenches that extend at least through a top P-layer and an N-barrier layer. A conductive material may be disposed in the trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches. A highly doped P-pocket may be formed in an upper portion of the top P-layer between the trenches. A floating N-pocket may be formed directly underneath the P-pocket. The floating N-pocket may be as wide as or wider than the P-pocket. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
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Citations
21 Claims
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1. A trench diode comprising:
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an epitaxial layer of a first conductivity type; a barrier layer of the first conductivity type formed above the top surface of the epitaxial layer; a top-layer of a second conductivity type formed above the top surface of the barrier layer; one or more trenches formed through the top-layer and the barrier layer, wherein the a conductive material is disposed in the trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches; a contact pocket formed in an upper portion of the top-layer, wherein the contact pocket is of the second conductivity type, and wherein a doping concentration of the contact pocket is greater than a doping concentration of the top-layer; an electrically floating pocket formed underneath the contact pocket, wherein the floating pocket is of the first conductivity type; and an electrode configured to contact the contact pocket, the top-layer, and the conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for forming a fast recovery trench diode comprising:
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forming an epitaxial layer of a first conductivity type; forming a barrier layer of the first conductivity type above the epitaxial layer, wherein a doping concentration of the barrier layer is greater than a doping concentration of the epitaxial layer; forming a top-layer of a second conductivity type above the barrier layer; forming one or more trenches that extend at least through the top-layer and the barrier layer disposing a conductive material in the one or more trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches; forming a contact pocket of the second conductivity type in an upper portion of the top-layer, wherein a doping concentration of the contact pocket is greater than a doping concentration of the top-layer; forming an electrically floating pocket of the first conductivity type underneath the contact pocket; and forming a conductive contact layer above the top-layer, wherein the contact layer is electrically connected to the contact pocket, the top-layer, and the conductive material. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification