High voltage ultrasound transmitter with symmetrical high and low side drivers comprising stacked transistors

• US 8,715,192 B2
• Filed: 10/30/2008
• Issued: 05/06/2014
• Est. Priority Date: 10/30/2008
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Koen, Myron J., Oguzman, Ismail H.
• Primary Examiner(s): Jung, Unsu
• Assistant Examiner(s): Akar, Serkan
• Application Number:
  US12/261,252
• Publication Number:
  US 20100113935A1
• Time in Patent Office: 2,014 Days
• Field of Search: 326/83, 326/84, 327/206, 327/248, 327/108, 600/437, 600/459, 600/443, 310/334, 330/136, 330/253, 330/254, 330/298, 330/69, 330/9, 324/673, 324/762.09
• US Class Current: 600/459
• CPC Class Codes: A61B 8/4483 characterised by features of the ultrasound transducer
• CPC Class Codes: B06B 1/0215 for generating pulses, e.g. bursts of oscillations, envelopes

Abstract

A system and method for providing a high voltage ultrasonic drive signal from an ultrasound transmitter are disclosed herein. An ultrasound transmitter includes a first driver and a second driver. Each of the drivers includes an N-type device and a P-type device. The N-type device and the P-type device of each driver are serially coupled. Activation of the first driver drives an ultrasound transmitter output to a first voltage. Activation of the second driver drives the ultrasound transmitter output to a second voltage. The driver activations produce an ultrasonic drive signal at the ultrasound transmitter output.

Claims

1. An ultrasound transmitter, comprising:

a high side driver and a low side driver, wherein each of the a high side driver and a low side driver comprising an N-type field effect transistor (FET) serially coupled to a P-type FET, where, the N-type FET and P-type FET of each of the high side driver and the low side driver configured to switch current to an output of the driver in response to a driver switching control signal;

buffer drivers comprising inputs and outputs where inputs are coupled to the bias network and outputs are coupled to both the high side and the low side drivers;

a bias network that substantially equalizes the voltage drop across the N-type FET and the P-type FET of the high side and the low side drivers;

wherein the bias network further comprises;

a first, second, third and fourth resistance coupled in series between the first input to the second input on an input side of the ultrasound transmitter, and coupled between the gate of the N-type FET of the high side driver and the gate of the P-type FET of the low side driver on an output side of the ultrasound transmitter,

wherein a first buffer is coupled between the first resistance and the second resistance and the gate of the high side P-type FET;

wherein a second buffer is coupled between the third resistance and the fourth resistance and the gate of the low side N-type FET; and

wherein a node between the second resistor and the third resistor is coupled to a node between the high side driver and the low side driver;

wherein current flow through the bias network becomes substantially zero when the first and second drivers are disabled; and

wherein activation of the high side driver drives the ultrasound transmitter output to a first voltage and activation of the low side driver drives the ultrasound transmitter output to a second voltage, said activations producing a high voltage ultrasonic drive signal at the ultrasound transmitter output preserving a symmetry of the high-side and the low-side.

2. The ultrasound transmitter of claim 1, wherein the P-type FET of the high side driver is connected to the ultrasound transmitter output and the N-type FET of the high side driver switches voltage to the P-type FET.

3. The ultrasound transmitter of claim 1, wherein one of the high side and low side drivers is activated while the other of the high side driver and low side drivers is inactivated.

4. The ultrasound transmitter of claim 1, wherein the N-type FET of the low side driver is connected to the transmitter output and the P-type FET of the low side driver switches voltage to the N-type FET.

5. The ultrasound transmitter of claim 1, further comprising the first buffer coupled between a first node of the bias network and the high side driver, and the second buffer coupled between a second node of the bias network and the low side driver.

6. The ultrasound transmitter of claim 1, wherein the transmitter is disabled by driving high side and low side driver control inputs to a voltage of substantially zero.

7. The ultrasound transmitter of claim 1, wherein the N-type FET of the high side driver is coupled between the P-type FET of the high side driver and a positive power supply, and the P-type FET of the low side driver is coupled between the N-type FET of the low side driver and a negative power supply.

12. The apparatus of claim 1, wherein the leakage current becomes 0 A when the output drivers are disabled.

8. A method for providing a high voltage ultrasonic drive signal, comprising:

a stacked field effect transistors (FET) with high side and a low side drivers where each of the both high side driver and low side drivers further comprise N-type FET and P-type FET connected in series,

activating each of the high side N-type FET and a high side P-type FET drive an output node to a first voltage in response to a driver switching control signal;

deactivating each of a low side N-type FET and a P-type FET while the high side N-type FET and the P-type FET are activated, where the low side N-type FET and a low side P-type FET drive the output node to a second voltage when activated in response to a driver switching control signal;

reducing current flow in a bias network by deactivating both the high side and the low side N-type FETs as well as both the high side and low side P-type devices FETs;

preserving a symmetry of the high-side and the low-side; and

providing a high voltage ultrasonic drive signal;

wherein the bias network further comprises;

a first, second, third and fourth resistance coupled in series between the first input to the second input on an input side of the ultrasound transmitter, and coupled between the gate of the N-type FET of the high side driver and the gate of the P-type FET of the low side driver on an output side of the ultrasound transmitter,

wherein a first buffer is coupled between the first resistance and the second resistance and the gate of the high side P-type FET;

wherein a second buffer is coupled between the third resistance and the fourth resistance and the gate of the low side N-type FET; and

wherein a node between the second resistor and the third resistor is coupled to a node between the high side driver and the low side driver.

9. The method of claim 8, further comprising driving a control input of the high side N-type FET and the low-side P-type FET to a third voltage to deactivate the FETs.

10. An ultrasound imaging system, comprising:

an ultrasonic signal transducer that converts an electrical signal into an acoustical signal;

a signal transmitter coupled to the transducer, the transmitter comprising a high-side driver that comprises a first set of stacked complementary drive transistors and a low side driver that comprises a second set of stacked complementary drive transistors, each driver comprising an N-type field effect transistor (FET) serially coupled to a P-type FET, the N-type FET and the P-type FET of each high side and low side driver configured to switch current to an output of the driver in response to a common driver switching control signal; and

a bias network that substantially equalizes the voltage drop across the N-type FET and the P-type FET of the low side driver and the high side driver, wherein the current flow in the bias network is reduced by disabling the high-side and the low-side drivers,

wherein the bias network further comprises;

first, second, third and fourth resistance coupled in series between the first input to the second input on an input side of the ultrasound transmitter, and coupled between the gate of the N-type FET of the high side driver and the gate of the P-type FET of the low side driver on an output side of the ultrasound transmitter,

wherein a first buffer is coupled between the first resistance and the second resistance and the gate of the high side P-type FET;

wherein a second buffer is coupled between the third resistance and the fourth resistance and the gate of the low side N-type FET; and

wherein a node between the second resistor and the third resistor is coupled to a node between the high side driver and the low side driver,

wherein activation of the high side driver drives the ultrasound transmitter output to a first voltage and activation of the low side driver drives the ultrasound transmitter output to a second voltage, said activations producing a high voltage ultrasonic drive signal at the ultrasound transmitter output preserving a symmetry of the high-side and the low-side.

11. The ultrasound imaging system of claim 10, wherein the high-side driver and the low-side driver are disabled by driving a control input of each driver to a common voltage.