Semiconductor device and method for manufacturing the same
First Claim
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1. A method for manufacturing a semiconductor device comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor layer over the gate insulating film, which contains indium, gallium, and zinc and overlaps with the gate electrode;
forming buffer layers over the oxide semiconductor layer and a first electrode and a second electrode over the buffer layers,wherein the buffer layers are formed in such a manner that a target which includes, as its component, an oxide containing indium, gallium, and zinc is sputtered in an atmosphere including a nitrogen gas.
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Abstract
In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
163 Citations
18 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor layer over the gate insulating film, which contains indium, gallium, and zinc and overlaps with the gate electrode; forming buffer layers over the oxide semiconductor layer and a first electrode and a second electrode over the buffer layers, wherein the buffer layers are formed in such a manner that a target which includes, as its component, an oxide containing indium, gallium, and zinc is sputtered in an atmosphere including a nitrogen gas. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first electrode and a second electrode over the gate insulating film, whose end portions overlap with the gate electrode; forming buffer layers over the first electrode and the second electrode and an oxide semiconductor layer containing indium, gallium, and zinc over the buffer layers, wherein the buffer layers are formed in such a manner that a target which includes, as its component, an oxide containing indium, gallium, and zinc is sputtered in an atmosphere including a nitrogen gas. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor layer over the gate insulating film, which contains indium, gallium, and zinc and overlaps with the gate electrode; sputtering a target including, as its component, an oxide containing indium, gallium, and zinc in an atmosphere including a nitrogen gas to form an oxynitride film; forming a conductive film over the oxynitride film; and etching the conductive film and the oxynitride film to form buffer layers over the oxide semiconductor layer and a first electrode and a second electrode over the buffer layers. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Sakata, Junichiro, Maruyama, Tetsunori, Imoto, Yuki, Asano, Yuji, Koezuka, Junichi
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Primary Examiner(s)TRINH, MICHAEL MANH
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Application NumberUS13/718,051Publication NumberTime in Patent Office504 DaysField of Search438/104, 438/149, 438/158, 438/164, 257/E21.415, 257/E21.414, 257/E21.461US Class Current438/104CPC Class CodesC04B 2235/3284 Zinc oxides, zincates, cadm...C04B 2235/3286 Gallium oxides, gallates, i...C04B 35/58 based on borides, nitrides,...H01L 27/1225 with semiconductor material...H01L 29/66742 Thin film unipolar transistorsH01L 29/66969 of devices having semicondu...H01L 29/78618 characterised by the drain ...H01L 29/7869 having a semiconductor body...
