Method for processing oxide semiconductor film and method for manufacturing semiconductor device

• US 8,716,073 B2
• Filed: 07/12/2012
• Issued: 05/06/2014
• Est. Priority Date: 07/22/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Ohno, Shinji, Koezuka, Junichi, Tezuka, Sachiaki, Sato, Yuichi
• Primary Examiner(s): Ingham, John C
• Application Number:
  US13/547,451
• Publication Number:
  US 20130023087A1
• Time in Patent Office: 663 Days
• Field of Search: 257/14, 257/43, 257/E29.296, 438/104, 438/149, 438/722
• US Class Current: 438/150
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Claims