Methods of forming through silicon via openings

• US 8,716,128 B2
• Filed: 04/14/2011
• Issued: 05/06/2014
• Est. Priority Date: 04/14/2011
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: TSMC Solid State Lighting Ltd. (Epistar Corporation)
• Inventors: Chern, Chyi Shyuan, Wu, Hsin-Hsien, Chang, Chun-Lin, Hsia, Hsing-Kuo, Kuo, Hung-Yi
• Primary Examiner(s): MULPURI, SAVITRI
• Application Number:
  US13/086,542
• Publication Number:
  US 20120264296A1
• Time in Patent Office: 1,118 Days
• Field of Search: 438/660, 438/667, 438/675, 438/680, 257/E21.597
• US Class Current: 438/660
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate

Abstract

A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

Claims

1. A method of forming a through-silicon-via (TSV) opening, the method comprising:

forming a TSV opening through a substrate;

removing a recast of a material of the substrate on sidewalls of the TSV opening with a first chemical, wherein the first chemical comprises a halogen-containing chemical; and

cleaning the sidewalls of the TSV opening with a second chemical by substantially removing a residue of the first chemical, wherein the second chemical comprises a first component that is substantially inactive with the material of the substrate and a second component that is substantially active with the halogen component of the halogen-containing chemical, and wherein the first component is selected from a group consisting of helium, neon, argon, krypton, xenon and radon, and wherein the second component comprises, wherein the second chemical comprises xenon dihydride (XeH2).

2. The method of claim 1, wherein forming the TSV opening comprises:

laser drilling the substrate to form the TSV opening through the substrate, wherein the laser drilling process generates the recast on the sidewalls of the TSV opening.

3. The method of claim 2, further comprising:

forming a dielectric layer over a surface of the substrate, wherein the laser drilling forms the TSV opening through the dielectric layer.

4. The method of claim 1, wherein the first chemical comprises at least one of xenon difluoride (XeF₂), sulfur tetrafluoride (SF₄) and sulfur hexafluoride (SF₆).

5. The method of claim 1, wherein the second chemical has a flow rate of about 3 standard cubic centimeter per minute (sccm) or more and a concentration of XeH₂ of about 20% or more by volume.

6. A method of forming a through-silicon-via (TSV) opening, the method comprising:

laser drilling a substrate to form a TSV opening through the substrate, wherein the laser drilling process generates a recast of a material of the substrate on the sidewalls of the TSV opening;

removing the recast on sidewalk of the TSV opening with a first chemical, wherein the first chemical comprises a halogen-containing chemical; and

cleaning the sidewalls of the TSV opening with a second chemical by substantially removing a residual of the first chemical, wherein the second chemical comprises a first component that is substantially inactive with the material of the substrate and a second component that is substantially active with the halogen component of the halogen-containing chemical, and wherein the first component is selected from a group consisting of helium, neon, argon, krypton, xenon and radon, and wherein the second component comprises, wherein the second chemical comprises xenon dihydride (XeH2).

7. The method of claim 6, further comprising:

forming a dielectric layer over a surface of the substrate, wherein the laser drilling forms the TSV opening through the dielectric layer.

8. The method of claim 6, wherein the first chemical comprises at least one of xenon difluoride (XeF₂), sulfur tetrafluoride (SF₄) and sulfur hexafluoride (SF₆).

9. The method of claim 6, wherein the second chemical has a flow rate of about 3 standard cubic centimeter per minute (sccm) or more and a concentration of XeH₂ of about 20% or more.