Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
First Claim
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1. A thin-film transistor comprising:
- a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx; and
a transparent layer disposed in contact with the channel layer and having a refractive index of nt,wherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of nx>
nt,wherein the channel layer is formed of an amorphous oxide having a composition represented by the following formula;
[(Sn1-xM4x)O2]a.[(In1-yM3y)2O3]b.[(Zn1-zM2zO)]c wherein 0≦
x≦
1, 0≦
y≦
1, 0≦
z≦
1, 0≦
a≦
1, 0≦
b≦
1, 0≦
c≦
1, and a+b+c=1;
M4 is a Group 4 element having an atomic number less than that of Sn selected from the group consisting of Si, Ge, and Zr;
M3 is Ga; and
M2 is a Group 2 element having an atomic number less than that of Zn selected from the group consisting of Mg and Ca.
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Abstract
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
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Citations
13 Claims
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1. A thin-film transistor comprising:
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a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx; and a transparent layer disposed in contact with the channel layer and having a refractive index of nt, wherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of nx>
nt,wherein the channel layer is formed of an amorphous oxide having a composition represented by the following formula;
[(Sn1-xM4x)O2]a.[(In1-yM3y)2O3]b.[(Zn1-zM2zO)]cwherein 0≦
x≦
1, 0≦
y≦
1, 0≦
z≦
1, 0≦
a≦
1, 0≦
b≦
1, 0≦
c≦
1, and a+b+c=1;M4 is a Group 4 element having an atomic number less than that of Sn selected from the group consisting of Si, Ge, and Zr; M3 is Ga; and M2 is a Group 2 element having an atomic number less than that of Zn selected from the group consisting of Mg and Ca. - View Dependent Claims (2, 3, 4, 5)
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6. A display device comprising a light-emitting element and a thin-film transistor for driving the light-emitting element, wherein the thin-film transistor comprises:
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a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx; and a transparent layer disposed in contact with the channel layer and having a refractive index of nt, wherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of nx>
nt. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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Specification