Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a light-receiving element configured to convert light into an electric signal;
an insulating film over the light-receiving element;
a first transistor configured to transfer the electric signal, one of a source and a drain of the first transistor being electrically connected to an output terminal of the light-receiving element;
a second transistor configured to amplify the transferred electric signal, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor; and
a third transistor configured to control reading of an output signal generated by the second transistor, one of a source and a drain of the third transistor being electrically connected to one of a source and a drain of the second transistor,wherein the first transistor comprises an oxide semiconductor layer comprising the source and the drain,wherein the entire oxide semiconductor layer is provided over the insulating film and overlaps with the insulating film,wherein a gate of the third transistor extends over the light-receiving element, andwherein the first transistor is provided over the second transistor with the insulating film provided therebetween.
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Abstract
An object of the invention is to improve the accuracy of light detection in a photosensor, and to increase the light-receiving area of the photosensor. The photosensor includes: a light-receiving element which converts light into an electric signal; a first transistor which transfers the electric signal; and a second transistor which amplifies the electric signal. The light-receiving element includes a silicon semiconductor, and the first transistor includes an oxide semiconductor. The light-receiving element is a lateral-junction photodiode, and an n-region or a p-region included in the light-receiving element overlaps with the first transistor.
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Citations
30 Claims
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1. A semiconductor device comprising:
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a light-receiving element configured to convert light into an electric signal; an insulating film over the light-receiving element; a first transistor configured to transfer the electric signal, one of a source and a drain of the first transistor being electrically connected to an output terminal of the light-receiving element; a second transistor configured to amplify the transferred electric signal, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor; and a third transistor configured to control reading of an output signal generated by the second transistor, one of a source and a drain of the third transistor being electrically connected to one of a source and a drain of the second transistor, wherein the first transistor comprises an oxide semiconductor layer comprising the source and the drain, wherein the entire oxide semiconductor layer is provided over the insulating film and overlaps with the insulating film, wherein a gate of the third transistor extends over the light-receiving element, and wherein the first transistor is provided over the second transistor with the insulating film provided therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a photodiode comprising a semiconductor film provided on a surface, the semiconductor film comprising an n-region and a p-region each in contact with the surface; an insulating film over the photodiode; a first transistor configured to transfer an electric signal generated by the photodiode, one of a source and a drain of the first transistor being electrically connected to an output terminal of the photodiode; a second transistor configured to amplify the transferred electric signal, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor; and a third transistor configured to control reading of an output signal generated by the second transistor, one of a source and a drain of the third transistor being electrically connected to one of a source and a drain of the second transistor, wherein the first transistor comprises an oxide semiconductor layer comprising the source and the drain and overlaps with one of the n-region and the p-region of the photodiode when seen from above, wherein the entire oxide semiconductor layer is provided over the insulating film and overlaps with the insulating film, wherein a gate of the third transistor extends over the p-region of the semiconductor film, and wherein the first transistor is provided over the second transistor with the insulating film provided therebetween. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a light-receiving element configured to convert light into an electric signal; an insulating film over the light-receiving element; a first transistor, one of a source and a drain of the first transistor being electrically connected to an output terminal of the light-receiving element; a second transistor, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor; and a third transistor, one of a source and a drain of the third transistor being electrically connected to one of a source and a drain of the second transistor, wherein the first transistor comprises an oxide semiconductor layer comprising the source and the drain, wherein the entire oxide semiconductor layer is provided over the insulating film and overlaps with the insulating film, wherein a gate of the third transistor extends over the light-receiving element, and wherein the first transistor is provided over the second transistor with the insulating film provided therebetween. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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a photodiode comprising a semiconductor film provided on a surface, the semiconductor film comprising an n-region and a p-region each in contact with the surface; an insulating film over the photodiode; a first transistor, one of a source and a drain of the first transistor being electrically connected to an output terminal of the photodiode; a second transistor, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor; and a third transistor, one of a source and a drain of the third transistor being electrically connected to one of a source and a drain of the second transistor, wherein the first transistor comprises an oxide semiconductor layer comprising the source and the drain and overlaps with one of the n-region and the p-region of the photodiode when seen from above, wherein the entire oxide semiconductor layer is provided over the insulating film and overlaps with the insulating film, wherein a gate of the third transistor extends over the p-region of the semiconductor film, and wherein the first transistor is provided over the second transistor with the insulating film provided therebetween. - View Dependent Claims (26, 27, 28, 29, 30)
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Specification