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Contact structure of semiconductor device

  • US 8,716,765 B2
  • Filed: 03/23/2012
  • Issued: 05/06/2014
  • Est. Priority Date: 03/23/2012
  • Status: Active Grant
First Claim
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1. A contact structure for a semiconductor device comprising:

  • a substrate comprising a major surface and a cavity, the cavity having a bottom surface lower than the major surface;

    a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate, and the strained material extends upward over the major surface of the substrate;

    a first metal layer over the strained material;

    a dielectric layer over the first metal layer, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; and

    a second metal layer over the dielectric layer.

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