Compliant bipolar micro device transfer head

• US 8,716,767 B2
• Filed: 10/25/2013
• Issued: 05/06/2014
• Est. Priority Date: 07/06/2012
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: LuxVue Techonology Corporation (Apple Inc.)
• Inventors: Golda, Dariusz, Bibl, Andreas
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US14/063,963
• Publication Number:
  US 20140048909A1
• Time in Patent Office: 193 Days
• Field of Search: 257/619, 257/623, 257/774, 257/E29.324, 257/288, 438/130, 438/128, 438/158, 438/250, 438/251, 438/253, 438/254, 438/261, 438/263, 438/276, 438/30, 438/39, 438/396
• US Class Current: 257/288
• CPC Class Codes: B32B 38/18 Handling of layers or the laminate
• CPC Class Codes: B81C 99/002 Apparatus for assembling MEMS, e.g. micromanipulators micromanipulators per se B25J7/00
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 21/3083 characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H02N 13/00 : Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• CPC Class Codes: Y10T 156/17 : Surface bonding means and/or assemblymeans with work feeding or handling means

Abstract

A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Claims

1. A compliant bipolar transfer head array comprising:

a base substrate;

an insulating layer on the base substrate;

a patterned device layer on the insulating layer, the patterned device layer comprising;

a first trace interconnect integrally formed with a first array of electrodes;

a second trace interconnect integrally formed with a second array of electrodes;

wherein each electrode in the first and second arrays of electrodes includes a mesa structure protruding above the first and second trace interconnects;

wherein the first and second arrays of electrodes are aligned and electrically insulated from one another, and each electrode of the first and second arrays of electrodes is deflectable toward the base substrate; and

a dielectric layer covering a top surface of each mesa structure of the first and second arrays of electrodes.

2. The compliant bipolar transfer head array of claim 1, wherein the first trace interconnect runs parallel to the first array of electrodes, and the second trace interconnect runs parallel to the second array of electrodes.

3. The compliant bipolar transfer head array of claim 2, wherein the first and second trace interconnects are parallel.

4. The compliant bipolar transfer head array of claim 1, wherein the first and second trace interconnects run through a working area of the compliant bipolar transfer head array including the first and second arrays of electrodes.

5. The compliant bipolar transfer head array of claim 1, wherein each electrode in the first and second arrays of electrodes is deflectable into a cavity in the base substrate.

6. The compliant bipolar transfer head array of claim 5, wherein each electrode in the first and second arrays of electrodes is deflectable into the same cavity in the base substrate.

7. The compliant bipolar transfer head array of claim 5, wherein the cavity wraps around an end of one of the first and second trace interconnects.

8. The compliant bipolar transfer head array of claim 5, wherein the first and second arrays of electrodes are deflectable into a plurality of separate cavities in the base substrate.

9. The compliant bipolar transfer head array of claim 1, further comprising a first dielectric layer covering a top surface of each of the first and second trace interconnect.

10. The compliant bipolar transfer head array of claim 9, wherein the dielectric layer overlaps a top surface of the first dielectric layer.

11. The compliant bipolar transfer head array of claim 10, wherein the dielectric layer has a higher dielectric constant or dielectric breakdown strength than the first dielectric layer.

12. The compliant bipolar transfer head array of claim 1, wherein the first and second arrays of electrodes form an array of supported beams spanning between the first and second trace interconnects.

13. The compliant bipolar transfer head array of claim 12, further comprising an array of dielectric joints between the first and second arrays of electrodes.

14. The compliant bipolar transfer head array of claim 13, wherein the dielectric joints are parallel to the first and second trace interconnects.

15. The compliant bipolar transfer head array of claim 13, wherein the dielectric joints are perpendicular to the first and second trace interconnects.

16. The compliant bipolar transfer head array of claim 12, wherein the supported beams include bends.

17. The compliant bipolar transfer head array of claim 12, wherein the supported beams are cantilever beams.

18. The compliant bipolar transfer head array of claim 12, further comprising an open space between the mesa structures of first and second arrays of electrodes.