Semiconductor device and associated fabrication method
First Claim
1. A semiconductor device, comprising:
- a trench metal-oxide semiconductor field effect transistor (MOSFET), formed on a semiconductor initial layer, the trench MOSFET comprising a well region on the semiconductor initial layer, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type;
a Schottky diode, comprising an anode metal layer, wherein the anode metal layer is above and contacting the semiconductor initial layer; and
a trench isolation structure, coupled between the trench MOSFET and the Schottky diode, configured to block part of the well region from laterally diffusing;
wherein the well region comprises an overgrowth part under the trench isolation structure, and wherein the overgrowth part laterally diffuses and extends over the trench isolation structure.
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Accused Products
Abstract
A semiconductor device and a method for forming the semiconductor device wherein the semiconductor comprises: a trench MOSFET, formed on a semiconductor initial layer, comprising a well region, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type; an integrated Schottky diode next to the trench MOSFET, comprising a anode metal layer contacted to the semiconductor initial layer; a trench isolation structure, coupled between the trench MOSFET and integrated Schottky diode, configured to resist part of lateral diffusion from the well region; wherein the well region comprises an overgrowth part which laterally diffuses under the trench isolation structure and extends out of it.
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Citations
14 Claims
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1. A semiconductor device, comprising:
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a trench metal-oxide semiconductor field effect transistor (MOSFET), formed on a semiconductor initial layer, the trench MOSFET comprising a well region on the semiconductor initial layer, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type; a Schottky diode, comprising an anode metal layer, wherein the anode metal layer is above and contacting the semiconductor initial layer; and a trench isolation structure, coupled between the trench MOSFET and the Schottky diode, configured to block part of the well region from laterally diffusing; wherein the well region comprises an overgrowth part under the trench isolation structure, and wherein the overgrowth part laterally diffuses and extends over the trench isolation structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising
a semiconductor initial layer, having a first conductivity type; -
a well region, formed on the semiconductor initial layer, the well region having a second conductivity type; a source region, formed on the surface of the well region, the source region having a first conductivity type; a first trench, stretching through the well region and extending to the semiconductor initial layer, the first trench comprising a gate structure; a second trench next to the well region, the second trench comprising a trench isolation structure configured to block part of the well region from laterally diffusing; and an anode meta layer formed on part of the semiconductor initial layer, wherein the anode metal layer is between two second trenches; wherein the well region comprises an overgrowth part under the second trench, and wherein the overgrowth part laterally diffuses and extends over the second trench. - View Dependent Claims (11, 12, 13, 14)
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Specification