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Magnetoresistive element and method of manufacturing the same

  • US 8,716,818 B2
  • Filed: 03/23/2012
  • Issued: 05/06/2014
  • Est. Priority Date: 07/01/2011
  • Status: Active Grant
First Claim
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1. A magnetoresistive element comprising:

  • a storage layer having a variable and perpendicular magnetization;

    a tunnel barrier layer on the storage layer;

    a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer;

    a hard mask layer on the reference layer;

    a side wall spacer layer on side walls of the reference layer and the hard mask layer; and

    a boundary layer between the tunnel barrier layer and the reference layer,wherein an in-plane size of the reference layer is smaller than an in-plane size of the storage layer, a difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less, and the side wall spacer layer comprises a material selected from a group consisting of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

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