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Fast gating photosurface

  • US 8,717,469 B2
  • Filed: 02/03/2010
  • Issued: 05/06/2014
  • Est. Priority Date: 02/03/2010
  • Status: Expired due to Fees
First Claim
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1. A method of gating a photosurface comprising a substrate on which photopixels and associated storage pixels are formed, the method comprising:

  • applying a first voltage at a first time to the substrate to turn on the photosurface and initiate an exposure period of the photosurface;

    applying a second voltage at a second time to the substrate to turn off the photosurface and end the exposure period; and

    biasing the photopixels and associated storage pixels to maintain a photocharge transfer state substantially at all times between the first and second times in which photocharge moves substantially upon its generation by light incident on a photopixel between the first and second times towards the photopixel'"'"'s storage pixel.

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