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Storage element, storage device, signal processing circuit, and method for driving storage element

  • US 8,717,806 B2
  • Filed: 01/03/2012
  • Issued: 05/06/2014
  • Est. Priority Date: 01/14/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first storage element comprising;

    a first inverter;

    a second inverter;

    a first transistor comprising a channel formation region in an oxide semiconductor layer;

    a first switch;

    a first input terminal; and

    a first output terminal,wherein the first input terminal is electrically connected to an input terminal of the first inverter and an output terminal of the second inverter through the first switch,wherein the first output terminal is electrically connected to an input terminal of the second inverter and a first terminal of the first transistor,wherein an output terminal of the first inverter is electrically connected to a second terminal of the first transistor,wherein one of the first inverter and the second inverter is provided on a first electrical path between the first switch and the first transistor, andwherein the other of the first inverter and the second inverter is provided on a second electrical path between the first switch and the first transistor.

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