Storage element, storage device, signal processing circuit, and method for driving storage element
First Claim
1. A semiconductor device comprising:
- a first storage element comprising;
a first inverter;
a second inverter;
a first transistor comprising a channel formation region in an oxide semiconductor layer;
a first switch;
a first input terminal; and
a first output terminal,wherein the first input terminal is electrically connected to an input terminal of the first inverter and an output terminal of the second inverter through the first switch,wherein the first output terminal is electrically connected to an input terminal of the second inverter and a first terminal of the first transistor,wherein an output terminal of the first inverter is electrically connected to a second terminal of the first transistor,wherein one of the first inverter and the second inverter is provided on a first electrical path between the first switch and the first transistor, andwherein the other of the first inverter and the second inverter is provided on a second electrical path between the first switch and the first transistor.
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Accused Products
Abstract
A storage element capable of retaining data even after supply of power supply voltage is stopped is provided. In the storage element retaining data in synchronization with a clock signal, with the use of a capacitor and a transistor having a channel in an oxide semiconductor layer, the data can be retained even after supply of power supply voltage is stopped. Here, when the transistor is turned off while the level of the clock signal is kept constant before the supply of power supply voltage is stopped, the data can be retained accurately in the capacitor. By applying such a storage element to each of a CPU, a memory, and a peripheral control device, supply of power supply voltage can be stopped in the entire system, so that the power consumption of the entire system can be reduced.
130 Citations
13 Claims
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1. A semiconductor device comprising:
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a first storage element comprising; a first inverter; a second inverter; a first transistor comprising a channel formation region in an oxide semiconductor layer; a first switch; a first input terminal; and a first output terminal, wherein the first input terminal is electrically connected to an input terminal of the first inverter and an output terminal of the second inverter through the first switch, wherein the first output terminal is electrically connected to an input terminal of the second inverter and a first terminal of the first transistor, wherein an output terminal of the first inverter is electrically connected to a second terminal of the first transistor, wherein one of the first inverter and the second inverter is provided on a first electrical path between the first switch and the first transistor, and wherein the other of the first inverter and the second inverter is provided on a second electrical path between the first switch and the first transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for driving a semiconductor device, the semiconductor device comprising:
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a first storage element comprising; a first inverter; a second inverter; a first transistor comprising an oxide semiconductor layer; a first switch; a first input terminal; a first output terminal; a first clock terminal; and a first control terminal, wherein the first input terminal is electrically connected to a first terminal of the first switch, wherein a second terminal of the first switch is electrically connected to an input terminal of the first inverter and an output terminal of the second inverter, wherein a first control terminal of the first switch is electrically connected to the first clock terminal, wherein the first output terminal is electrically connected to an input terminal of the second inverter and a first terminal of the first transistor, wherein an output terminal of the first inverter is electrically connected to a second terminal of the first transistor, and wherein a gate of the first transistor is electrically connected to the first control terminal, the method for driving the semiconductor device comprising the steps of; supplying a first voltage to the first clock terminal in a first period; supplying a third voltage to the first control terminal in a second period after the first period; and stopping supply of power supply voltage to the first storage element in a third period after the second period. - View Dependent Claims (8, 9, 10, 11)
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12. A method for driving a semiconductor device, the semiconductor device comprising:
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a first storage element comprising; a first inverter; a second inverter; a first transistor comprising an oxide semiconductor layer; a first switch; a first input terminal; a first output terminal; a first inversion clock terminal; and a first control terminal, wherein the first input terminal is electrically connected to a first terminal of the first switch, wherein a second terminal of the first switch is electrically connected to an input terminal of the first inverter and an output terminal of the second inverter, wherein a first control terminal of the first switch is electrically connected to the first inversion clock terminal, wherein the first output terminal is electrically connected to an input terminal of the second inverter and a first terminal of the first transistor, wherein an output terminal of the first inverter is electrically connected to a second terminal of the first transistor, and wherein a gate of the first transistor is electrically connected to the first control terminal, the method for driving the semiconductor device comprising the steps of; supplying a first voltage to the first inversion clock terminal in a first period; supplying a second voltage to the first inversion clock terminal in a second period after the first period; supplying power supply voltage to the first storage element in a third period after the second period; and supplying a third voltage to the first control terminal in a fourth period after the third period. - View Dependent Claims (13)
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Specification