Semi-quantitative thickness determination

• US 8,718,810 B2
• Filed: 11/01/2012
• Issued: 05/06/2014
• Est. Priority Date: 11/14/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Benvegnu, Dominic J., Swedek, Boguslaw A., David, Jeffrey Drue, Lee, Harry Q.
• Primary Examiner(s): ORTIZ RODRIGUEZ, CARLOS R
• Application Number:
  US13/666,578
• Publication Number:
  US 20130059499A1
• Time in Patent Office: 551 Days
• Field of Search: 700/121, 700/164
• US Class Current: 700/121
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

While a substrate is polished, it is also irradiated with light from a light source. A current spectrum of the light reflected from the surface of the substrate is measured. A selected peak, having a first parameter value, is identified in the current spectrum. A value of a second parameter associated with the first parameter is determined from a lookup table using a processor. Depending on the value of the second parameter, the polishing of the substrate is changed. An initial spectrum of light reflected from the substrate before the polishing of the substrate can be measured and a wavelength corresponding to a selected peak of the initial spectrum can be determined.

Claims

1. A method of performing polishing, comprising:

measuring an initial spectrum of light reflected from a substrate;

identifying a selected extrema in the initial spectrum and determining an initial wavelength or an initial width of the selected extrema in the initial spectrum;

polishing the substrate with a polishing pad;

while the substrate is being polished and after measuring the initial spectrum,

irradiating the substrate with light from a light source to generate light reflected from the substrate,

measuring, using a processor, a current spectrum of the light reflected from the substrate,

identifying, using the processor, the selected extrema in the current spectrum and determining a current wavelength or a current width of the selected extrema in the current spectrum,

determining, using the processor, a difference between the initial wavelength or initial width and the current wavelength or current width, respectively,

determining, using the processor, a value of a parameter, which is associated with the difference from a lookup table; and

changing, using a controller, the polishing of the substrate depending upon the parameter.

2. The method of claim 1, wherein the initial spectrum is a spectrum at a start of polishing.

3. The method of claim 1, wherein the difference is a wavelength shift relative to the initial wavelength.

4. The method of claim 1, wherein the difference is a change of width relative to the initial width.

5. The method of claim 1, wherein polishing the substrate comprises removing a quantity of a substance from a surface of the substrate, and the parameter is a thickness of the substance.

6. The method of claim 1, comprising stopping polishing if the value falls within a predetermined range of a first value.

7. The method of claim 1, wherein changing the polishing comprises stopping polishing.

8. The method of claim 1, wherein polishing the substrate is a step in a shallow trench isolation process.

9. The method of claim 1, wherein polishing the substrate is a step in an interlayer dielectric process.

10. A non-transitory machine readable storage device, comprising instructions to cause a polishing system to perform the operations of:

measuring an initial spectrum of light reflected from a substrate;

identifying a selected extrema in the initial spectrum and determining an initial wavelength or an initial width of the selected extrema in the initial spectrum;

polishing the substrate with a polishing pad;

while the substrate is being polished and after measuring the initial spectrum,

irradiating the substrate with light from a light source to generate light reflected from the substrate,

measuring, using a processor, a current spectrum of the light reflected from the substrate,

identifying, using the processor, the selected extrema in the current spectrum and determining a current wavelength or a current width of the selected extrema in the current spectrum,

determining, using the processor, a difference between the initial wavelength or initial width and the current wavelength or current width, respectively,

determining, using the processor, a value of a parameter, which is associated with the difference from a lookup table; and

changing, using a controller, the polishing of the substrate depending upon the parameter.

11. The computer program product of claim 10, wherein the initial spectrum is a spectrum at a start of polishing.

12. The computer program product of claim 10, wherein the difference is a wavelength shift relative to the initial wavelength.

13. An apparatus comprising:

a polishing pad configured to polish a substrate;

a light source configured to irradiate the substrate with light;

an in-situ optical monitoring system configured to obtain a spectrum of reflected light from the substrate;

a computer-readable storage medium configured to store a lookup table comprising values of a difference and a parameter;

a processor configured to receive an initial spectrum from the optical monitoring system, identify a selected extrema in the initial spectrum and determine an initial wavelength or an initial width of the selected extrema in the initial spectrum, receive a current spectrum from the optical monitoring system during polishing of the substrate and after receiving the initial spectrum, identify the selected extrema in the current spectrum and determine a current wavelength or a current width of the selected extrema in the current spectrum, determine the difference between the initial wavelength or initial width and the current wavelength or current width, respectively, and determine a value of the parameter which is associated with the difference from a lookup table; and

a controller configured to change the polishing of the substrate based on the parameter.

14. The apparatus of claim 13, wherein the processor is configured to receive the initial spectrum at a start of polishing.

15. The apparatus of claim 13, wherein the difference is a wavelength shift relative to the initial wavelength.