Film deposition apparatus

• US 8,721,790 B2
• Filed: 12/09/2010
• Issued: 05/13/2014
• Est. Priority Date: 12/10/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kato, Hitoshi, Honma, Manabu, Orito, Kohichi, Takeuchi, Yasushi, Kikuchi, Hiroyuki
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US12/963,673
• Publication Number:
  US 20110139074A1
• Time in Patent Office: 1,251 Days
• Field of Search: 118/715, 118/719, 118/728, 118/729, 118/730, 156/345.29, 156/345.31, 156/345.33, 156/345.54, 156/345.55
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes

Abstract

A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

Claims

1. A film deposition apparatus for depositing a film on a substrate by performing a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product, the film deposition apparatus comprising:

a vacuum chamber including a ceiling portion;

a turntable that is rotatably provided in the vacuum chamber and has on a first surface a substrate receiving area in which the substrate is placed;

a first reaction gas nozzle with an ejection hole provided to extend along a radial direction of the turntable and to supply a first reaction gas to the first surface of the turntable and;

a second reaction gas nozzle with an ejection hole provided to extend along the radial direction of the turntable away from the first reaction gas nozzle along a rotation direction of the turntable and to supply a second reaction gas to the first surface of the turntable;

a separation gas nozzle with an ejection hole provided to extend along the radial direction of the turntable between the first reaction gas nozzle and the second reaction gas nozzle and to supply a separation gas that separates the first reaction gas and the second reaction gas, the separation gas nozzle providing a separation area between the first reaction gas nozzle and the second reaction gas nozzle;

an evacuation port that evacuates the chamber; and

a nozzle cover provided for the first reaction gas nozzle to create;

a first space that is below the nozzle cover and that is between the nozzle cover and the turntable in which the ejection hole of the first reaction gas nozzle exists; and

a second space that is above the first reaction gas nozzle and the nozzle cover and that is between the nozzle cover and the ceiling portion such that the separation gas from the separation gas area is impeded from flowing into the first space and the separation gas is likely to flow through the second space rather than the first space.

2. The film deposition apparatus of claim 1,

wherein the nozzle cover includes a first flow regulation plate provided between the first reaction gas nozzle and the separation gas nozzle and extending along the first reaction gas nozzle in a longitudinal direction of the first reaction gas nozzle to create the first space and the second space.

3. The film deposition apparatus of claim 1, further comprising an evacuation portion that allows the separation gas to tend to flow to the second space rather than the first space by evacuation.

4. The film deposition apparatus of claim 3, wherein the evacuation portion includes a first evacuation nozzle provided in the second space and is introduced into the chamber through the ceiling portion of the chamber.

5. The film deposition apparatus of claim 3, wherein the evacuation portion includes a second evacuation nozzle provided in the second space and is provided along the first reaction gas nozzle nozzle that has the nozzle.

6. The film deposition apparatus of claim 5, wherein the second evacuation nozzle goes through a side portion of the chamber.

7. The film deposition apparatus of claim 3, wherein the evacuation portion includes

a partition wall provided in the second space and forms a gas flow passage between at least a part of an upper surface of the nozzle cover and the partition wall;

and

a third evacuation nozzle that is introduced into the chamber through the ceiling portion of the chamber and is gaseous communication with the gas flow passage.

8. The film deposition apparatus of claim 1,

wherein the ceiling portion is provided with a convex portion with a low ceiling surface to provide the separation area,

the low ceiling surface having a height from the turntable being determined so that the first reaction gas and the second reaction gas are impeded from flowing into a space between the low ceiling surface and the turntable.

9. The film deposition apparatus of claim 1,

wherein the ceiling portion is provided with a convex portion with a low ceiling surface to provide the separation area.

10. The film deposition apparatus of claim 2, wherein the first flow regulation plate is arranged upstream relative to the rotation direction of the turntable in relation to the first reaction gas nozzle.

11. The film deposition apparatus of claim 10, wherein the nozzle cover further includes a second flow regulation plate arranged downstream of the rotation direction of the turntable in relation to the first reaction gas nozzle.

12. The film deposition apparatus of claim 2, wherein the first flow regulation plate is provided such that the length of the flow regulation plate in the rotation direction of the turntable becomes longer in a direction from the center to the circumference of the turntable.

13. The film deposition apparatus of claim 2, wherein the first flow regulation plate is provided to be parallel with the first surface of the turntable.

14. The film deposition apparatus of claim 2, wherein the first flow regulation plate is provided to be inclined with respect to the first surface of the turntable such that the distance from the first surface of the turntable to the first flow regulation plate becomes smaller as closer to the separation gas nozzle.

15. The film deposition apparatus of claim 2, wherein the first flow regulation plate is attached to the first reaction gas nozzle.

16. The film deposition apparatus of claim 2, wherein the nozzle cover further includes a base portion that covers the first reaction gas nozzle and the first flow regulation plate is attached to the base portion.